Fundamentals and applications of selenium-passivated Si(100) surface

M. Tao

doi:10.1109/ICSICT.2006.306300

Fundamentals and applications of selenium-passivated Si(100) surface

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of diese applications are presented.

Original language	English (US)
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	458-461
Number of pages	4
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306300
State	Published - 2006
Externally published	Yes
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Oct 23 2006 → Oct 26 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/23/06 → 10/26/06

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306300

Cite this

Tao, M. (2006). Fundamentals and applications of selenium-passivated Si(100) surface. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 458-461). Article 4098135 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306300

Fundamentals and applications of selenium-passivated Si(100) surface. / Tao, M.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 458-461 4098135 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tao, M 2006, Fundamentals and applications of selenium-passivated Si(100) surface. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098135, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 458-461, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306300

Tao M. Fundamentals and applications of selenium-passivated Si(100) surface. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 458-461. 4098135. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306300

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AB - Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of diese applications are presented.

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Fundamentals and applications of selenium-passivated Si(100) surface

Abstract

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ASJC Scopus subject areas

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