Fundamentals and applications of selenium-passivated Si(100) surface

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of diese applications are presented.

Original languageEnglish (US)
Title of host publicationICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages458-461
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tao, M. (2007). Fundamentals and applications of selenium-passivated Si(100) surface. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 458-461). [4098135] https://doi.org/10.1109/ICSICT.2006.306300