Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy

Nathan Newman, T. C. Fu, X. Liu, Z. Liliental-Weber, M. Rubin, J. S. Chan, E. Jones, J. T. Ross, I. Tidswell, K. M. Yu, N. Cheung, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages483-489
Number of pages7
Volume339
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

Fingerprint

Molecular beam epitaxy
Organic Chemicals
Gallium nitride
Epitaxial films
Organic chemicals
Epitaxial growth
Electronic properties
Light emitting diodes
Structural properties
Chemical vapor deposition
Optical properties
Metals
Thin films
Lasers
gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Newman, N., Fu, T. C., Liu, X., Liliental-Weber, Z., Rubin, M., Chan, J. S., ... Weber, E. R. (1994). Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy. In Materials Research Society Symposium - Proceedings (Vol. 339, pp. 483-489). Materials Research Society.

Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy. / Newman, Nathan; Fu, T. C.; Liu, X.; Liliental-Weber, Z.; Rubin, M.; Chan, J. S.; Jones, E.; Ross, J. T.; Tidswell, I.; Yu, K. M.; Cheung, N.; Weber, E. R.

Materials Research Society Symposium - Proceedings. Vol. 339 Materials Research Society, 1994. p. 483-489.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Newman, N, Fu, TC, Liu, X, Liliental-Weber, Z, Rubin, M, Chan, JS, Jones, E, Ross, JT, Tidswell, I, Yu, KM, Cheung, N & Weber, ER 1994, Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy. in Materials Research Society Symposium - Proceedings. vol. 339, Materials Research Society, pp. 483-489, Proceedings of the 1994 MRS Spring Meeting, San Francisco, CA, USA, 4/4/94.
Newman N, Fu TC, Liu X, Liliental-Weber Z, Rubin M, Chan JS et al. Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy. In Materials Research Society Symposium - Proceedings. Vol. 339. Materials Research Society. 1994. p. 483-489
Newman, Nathan ; Fu, T. C. ; Liu, X. ; Liliental-Weber, Z. ; Rubin, M. ; Chan, J. S. ; Jones, E. ; Ross, J. T. ; Tidswell, I. ; Yu, K. M. ; Cheung, N. ; Weber, E. R. / Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy. Materials Research Society Symposium - Proceedings. Vol. 339 Materials Research Society, 1994. pp. 483-489
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