Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

J. D. Gallagher, Chi Xu, Liying Jiang, John Kouvetakis, Jose Menendez

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Abstract

The Ge-like indirect band gap of Ge1-x-ySixSn y alloys has been determined over an extended y > x range using photoluminescence spectroscopy from films grown on Ge-buffered Si substrates. It is found that the compositional dependence of this transition can be fit with a bilinear expression of the form (in eV): E ind = (0.668 ± 0.008) + (0.67 ± 0.15) x - (1.77 ± 0.16) y. These energies are significantly below the prediction from a simple linear interpolation between Si, Ge, and α-Sn, revealing a large negative bowing in the compositional dependence similar to that found earlier for direct transitions. The direct-indirect crossover boundary is found to lie along the compositional line y = (0.062 ± 0.014) + (0.76 ± 0.23)x, which in the limit x → 0 agrees with earlier results for the binary Ge1-ySny alloy.

Original languageEnglish (US)
Article number202104
JournalApplied Physics Letters
Volume103
Issue number20
DOIs
StatePublished - Nov 11 2013

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crossovers
interpolation
photoluminescence
predictions
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys. / Gallagher, J. D.; Xu, Chi; Jiang, Liying; Kouvetakis, John; Menendez, Jose.

In: Applied Physics Letters, Vol. 103, No. 20, 202104, 11.11.2013.

Research output: Contribution to journalArticle

@article{f39f2864642d4206981775e34fc07c60,
title = "Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys",
abstract = "The Ge-like indirect band gap of Ge1-x-ySixSn y alloys has been determined over an extended y > x range using photoluminescence spectroscopy from films grown on Ge-buffered Si substrates. It is found that the compositional dependence of this transition can be fit with a bilinear expression of the form (in eV): E ind = (0.668 ± 0.008) + (0.67 ± 0.15) x - (1.77 ± 0.16) y. These energies are significantly below the prediction from a simple linear interpolation between Si, Ge, and α-Sn, revealing a large negative bowing in the compositional dependence similar to that found earlier for direct transitions. The direct-indirect crossover boundary is found to lie along the compositional line y = (0.062 ± 0.014) + (0.76 ± 0.23)x, which in the limit x → 0 agrees with earlier results for the binary Ge1-ySny alloy.",
author = "Gallagher, {J. D.} and Chi Xu and Liying Jiang and John Kouvetakis and Jose Menendez",
year = "2013",
month = "11",
day = "11",
doi = "10.1063/1.4829621",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

AU - Gallagher, J. D.

AU - Xu, Chi

AU - Jiang, Liying

AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2013/11/11

Y1 - 2013/11/11

N2 - The Ge-like indirect band gap of Ge1-x-ySixSn y alloys has been determined over an extended y > x range using photoluminescence spectroscopy from films grown on Ge-buffered Si substrates. It is found that the compositional dependence of this transition can be fit with a bilinear expression of the form (in eV): E ind = (0.668 ± 0.008) + (0.67 ± 0.15) x - (1.77 ± 0.16) y. These energies are significantly below the prediction from a simple linear interpolation between Si, Ge, and α-Sn, revealing a large negative bowing in the compositional dependence similar to that found earlier for direct transitions. The direct-indirect crossover boundary is found to lie along the compositional line y = (0.062 ± 0.014) + (0.76 ± 0.23)x, which in the limit x → 0 agrees with earlier results for the binary Ge1-ySny alloy.

AB - The Ge-like indirect band gap of Ge1-x-ySixSn y alloys has been determined over an extended y > x range using photoluminescence spectroscopy from films grown on Ge-buffered Si substrates. It is found that the compositional dependence of this transition can be fit with a bilinear expression of the form (in eV): E ind = (0.668 ± 0.008) + (0.67 ± 0.15) x - (1.77 ± 0.16) y. These energies are significantly below the prediction from a simple linear interpolation between Si, Ge, and α-Sn, revealing a large negative bowing in the compositional dependence similar to that found earlier for direct transitions. The direct-indirect crossover boundary is found to lie along the compositional line y = (0.062 ± 0.014) + (0.76 ± 0.23)x, which in the limit x → 0 agrees with earlier results for the binary Ge1-ySny alloy.

UR - http://www.scopus.com/inward/record.url?scp=84889645612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889645612&partnerID=8YFLogxK

U2 - 10.1063/1.4829621

DO - 10.1063/1.4829621

M3 - Article

AN - SCOPUS:84889645612

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202104

ER -