Fully quantum mechanical simulations of gated silicon quantum wire structures: Investigating the effects of changing wire cross-section on transport

Richard Akis, Matthew Gilbert, David K. Ferry

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We present transport simulations of three-dimensional (3D) silicon quantum wires in which electron-phonon scattering is incorporated via local modifications to the potential encountered by the electron waves. Computing resistance as a function of wire length, we find that the effects of dissipation essentially take hold immediately, and are apparent right from the point at which the wire is long enough to act as a true waveguide.

Original languageEnglish (US)
Pages (from-to)87-90
Number of pages4
JournalJournal of Physics: Conference Series
Volume38
Issue number1
DOIs
StatePublished - May 10 2006

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quantum wires
wire
cross sections
silicon
electrons
dissipation
simulation
waveguides
scattering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fully quantum mechanical simulations of gated silicon quantum wire structures : Investigating the effects of changing wire cross-section on transport. / Akis, Richard; Gilbert, Matthew; Ferry, David K.

In: Journal of Physics: Conference Series, Vol. 38, No. 1, 10.05.2006, p. 87-90.

Research output: Contribution to journalArticle

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