Fullband particle-based simulation of high-field transient transport in III-V semiconductors

S. Wigger, Marco Saraniti, Stephen Goodnick, A. Leitenstorfer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes using a full-band particle-based simulator. Excellent agreement is found between the experimental and simulated results of the transient acceleration and velocity overshoot effects in GaAs and InP pin diodes due the femtosecond optical excitation of carriers.

Original languageEnglish (US)
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages564-567
Number of pages4
StatePublished - Dec 1 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Other

Other2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

Keywords

  • High-field transport
  • Monte Carlo simulation
  • Tera-hertz radiation

ASJC Scopus subject areas

  • Engineering(all)

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