This paper discusses the most recent progress in developing effective physics-based models for devices operating at millimeter-wave frequencies. The model is based on coupling dynamic electromagnetic wave solutions with carrier transport models. The potentials of this modeling approach for both device simulation and the global simulation of millimeter-wave circuits are demonstrated. Results comparing the full-wave model developed with conventional electrostatic models are provided through the simulation of different microwave transistors. The ability of the model to detect traveling wave effects, such as phase mismatch between the input and output electrodes of a conventional transistor, and their effects on the device gain are also provided. Results from the simulation of an air-bridged gate MESFET, designed to reduce traveling wave effects in high frequency transistors and solve the problem associated with high gate resistance, are illustrated and discussed. Finally, results showing the ability of this technique to model the nonlinearity and the harmonic distortion are provided through the simulation of an amplifier circuit.
|Original language||English (US)|
|Number of pages||13|
|Journal||Annales des Telecommunications/Annals of Telecommunications|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electrical and Electronic Engineering