@inproceedings{56c0f3cd4a2e4ed0a145d92dbadc5461,
title = "Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells",
abstract = "Laterally-arranged multiple bandgap (LAMB) solar cells based on InGaN nanowires or pillars with spatial composition-grading over a broad range over the surface of a single substrate were designed and simulated using Silvaco ATLAS software. The p-n junction is formed by n-type InGaN and a p-type GaP emitter, which is predicted to have a valence band well-aligned to In-rich InGaN based on a simple electron affinity band alignment model. Both three and six subcell designs were evaluated at various levels of solar concentration up to 240 suns. Efficiencies ranged from 32.9% to 40.2% for the three-subcell design and from 33.8% to 40.4% for the six-subcell design as the solar concentration was increased from one to 240 suns. A similar design utilizing a p-i-n structure rather than a simple p-n junction achieved 29.3% to 40.2% with three subcells and 36.1% to 46.2% with six subcells. The much greater benefit of increasing the number of subcells in the p-i-n design as compared to the p-n structure is attributed to more efficient carrier extraction, which enhances current-matching between subcells.",
keywords = "Gallium nitride, nanowires, photovoltaic cells, semiconductor device modeling, solar power generation",
author = "Derek Caselli and Cun-Zheng Ning",
year = "2012",
month = nov,
day = "26",
doi = "10.1109/PVSC.2012.6318106",
language = "English (US)",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "2518--2520",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}