Abstract

Laterally-arranged multiple bandgap (LAMB) solar cells based on InGaN nanowires or pillars with spatial composition-grading over a broad range over the surface of a single substrate were designed and simulated using Silvaco ATLAS software. The p-n junction is formed by n-type InGaN and a p-type GaP emitter, which is predicted to have a valence band well-aligned to In-rich InGaN based on a simple electron affinity band alignment model. Both three and six subcell designs were evaluated at various levels of solar concentration up to 240 suns. Efficiencies ranged from 32.9% to 40.2% for the three-subcell design and from 33.8% to 40.4% for the six-subcell design as the solar concentration was increased from one to 240 suns. A similar design utilizing a p-i-n structure rather than a simple p-n junction achieved 29.3% to 40.2% with three subcells and 36.1% to 46.2% with six subcells. The much greater benefit of increasing the number of subcells in the p-i-n design as compared to the p-n structure is attributed to more efficient carrier extraction, which enhances current-matching between subcells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2518-2520
Number of pages3
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Solar cells
Energy gap
Electron affinity
Valence bands
Nanowires
Substrates
Chemical analysis

Keywords

  • Gallium nitride
  • nanowires
  • photovoltaic cells
  • semiconductor device modeling
  • solar power generation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Caselli, D., & Ning, C-Z. (2012). Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2518-2520). [6318106] https://doi.org/10.1109/PVSC.2012.6318106

Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells. / Caselli, Derek; Ning, Cun-Zheng.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 2518-2520 6318106.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Caselli, D & Ning, C-Z 2012, Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6318106, pp. 2518-2520, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318106
Caselli D, Ning C-Z. Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 2518-2520. 6318106 https://doi.org/10.1109/PVSC.2012.6318106
Caselli, Derek ; Ning, Cun-Zheng. / Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 2518-2520
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