Full quantum mechanical simulation of ultra-small silicon devices in three-dimensions: Physics and issues

M. J. Gilbert, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A three dimensional ballistic quantum transport model for a quantum wire silicon MOSFET is presented. A non-uniform mesh with finer grid spacing in the high potential regions, was applied to the simulation of a quantum wire SOI MOSFET with a narrow channel (8 nm). As a result of this, the applied gate voltage reduces the channel barrier potential, thus the channel populates and depopulates with electrons alternatively. The results show that the electrons entering the channel have an exaggerated interaction with the channel dopants causing the formation of resonant slates within the channel.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages63-64
Number of pages2
StatePublished - Dec 1 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

ASJC Scopus subject areas

  • Engineering(all)

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