Full quantum mechanical simulation of ultra-small silicon devices in three-dimensions: Physics and issues

Matthew J. Gilbert, D. K. Ferry

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The combination of the need for alternative devices and the improvement in process technology has led to the examination of silicon quantum wires for future MOS technology. However, in order to properly model these devices, a full three-dimensional quantum mechanical treatment is required. In this paper, we present the results of a three-dimensional, fully quantum mechanical, self-consistent simulation of a silicon quantum wire MOSFET (Metal Oxide Field Effect Transistor) with a narrow channel (8 nm). A quasi-standing wave is formed in the narrow channel at certain gate voltages as the electron density is trapped in narrow channel. These effects are the result of two competing effects: (1) the interaction of the propagating electrons with the channel dopants, as well as with the dopants in the source and drain of the device. (2) the reflections from the boundaries that form the narrow channel both on the source side and the drain side.

Original languageEnglish (US)
Pages (from-to)355-358
Number of pages4
JournalJournal of Computational Electronics
Volume3
Issue number3-4
DOIs
StatePublished - Oct 1 2004

Keywords

  • 3D quantum simulation
  • MOSFET
  • Quantum wire
  • Scattering matrices
  • Silicon on insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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