Abstract

In this work we report on the 2D simulation of fully depleted Germanium-On-Insulator FET structures coupled with a high-κ dielectric using a full-band simulator. This simulator, based on the Cellular Monte Carlo method, provides an accurate transport model at the high electric fields present in the ultra-small devices considered in this work. Simulations of similar Germanium- and Silicon-On-Insulator devices have been performed to quantitatively analyze the predicted increase in performance of Germanium-On-Insulator technology. A characterization and comparison of the static behavior of these devices is presented for 50 nm MOSFETs.

Original languageEnglish (US)
Pages (from-to)2297-2302
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number10
DOIs
StatePublished - Aug 1 2004

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this