Abstract

In this work we report on the 2D simulation of fully depleted Germanium-On-Insulator FET structures coupled with a high-κ dielectric using a full-band simulator. This simulator, based on the Cellular Monte Carlo method, provides an accurate transport model at the high electric fields present in the ultra-small devices considered in this work. Simulations of similar Germanium- and Silicon-On-Insulator devices have been performed to quantitatively analyze the predicted increase in performance of Germanium-On-Insulator technology. A characterization and comparison of the static behavior of these devices is presented for 50 nm MOSFETs.

Original languageEnglish (US)
Pages (from-to)2297-2302
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number10
DOIs
StatePublished - Aug 2004

Fingerprint

Germanium
SOI (semiconductors)
germanium
field effect transistors
insulators
simulators
Simulators
simulation
Silicon
Field effect transistors
Monte Carlo method
Monte Carlo methods
Electric fields
electric fields
silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Full-band particle-based simulation of SOI and GOI MOSFETs. / Beysserie, Sébastien; Aboud, Shela; Goodnick, Stephen; Thornton, Trevor; Saraniti, Marco.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 08.2004, p. 2297-2302.

Research output: Contribution to journalArticle

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