TY - JOUR
T1 - Full-band particle-based simulation of SOI and GOI MOSFETs
AU - Beysserie, Sébastien
AU - Aboud, Shela
AU - Goodnick, Stephen
AU - Thornton, Trevor
AU - Saraniti, Marco
PY - 2004/8
Y1 - 2004/8
N2 - In this work we report on the 2D simulation of fully depleted Germanium-On-Insulator FET structures coupled with a high-κ dielectric using a full-band simulator. This simulator, based on the Cellular Monte Carlo method, provides an accurate transport model at the high electric fields present in the ultra-small devices considered in this work. Simulations of similar Germanium- and Silicon-On-Insulator devices have been performed to quantitatively analyze the predicted increase in performance of Germanium-On-Insulator technology. A characterization and comparison of the static behavior of these devices is presented for 50 nm MOSFETs.
AB - In this work we report on the 2D simulation of fully depleted Germanium-On-Insulator FET structures coupled with a high-κ dielectric using a full-band simulator. This simulator, based on the Cellular Monte Carlo method, provides an accurate transport model at the high electric fields present in the ultra-small devices considered in this work. Simulations of similar Germanium- and Silicon-On-Insulator devices have been performed to quantitatively analyze the predicted increase in performance of Germanium-On-Insulator technology. A characterization and comparison of the static behavior of these devices is presented for 50 nm MOSFETs.
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U2 - 10.1002/pssb.200404940
DO - 10.1002/pssb.200404940
M3 - Article
AN - SCOPUS:4644289089
SN - 0370-1972
VL - 241
SP - 2297
EP - 2302
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 10
ER -