1 Scopus citations

Abstract

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.

Original languageEnglish (US)
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages25-28
Number of pages4
StatePublished - Nov 2 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: Mar 7 2004Mar 11 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Other

Other2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period3/7/043/11/04

Keywords

  • Frequency analysis
  • Full-band simulation
  • Germanium
  • High-K dielectric
  • SOI MOSFET

ASJC Scopus subject areas

  • Engineering(all)

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    Beysserie, S., Branlard, J., Aboud, S., Goodnick, S., Thornton, T., & Saraniti, M. (2004). Full-band particle-based simulation of germanium-on-insulator FETs. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 25-28). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).