Abstract
We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.
| Original language | English (US) |
|---|---|
| Title of host publication | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
| Editors | M. Laudon, B. Romanowicz |
| Pages | 25-28 |
| Number of pages | 4 |
| Volume | 2 |
| State | Published - 2004 |
| Event | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004 |
Other
| Other | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 3/7/04 → 3/11/04 |
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Keywords
- Frequency analysis
- Full-band simulation
- Germanium
- High-K dielectric
- SOI MOSFET
ASJC Scopus subject areas
- Engineering(all)
Cite this
Full-band particle-based simulation of germanium-on-insulator FETs. / Beysserie, S.; Branlard, J.; Aboud, S.; Goodnick, Stephen; Thornton, Trevor; Saraniti, Marco.
2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. ed. / M. Laudon; B. Romanowicz. Vol. 2 2004. p. 25-28.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Full-band particle-based simulation of germanium-on-insulator FETs
AU - Beysserie, S.
AU - Branlard, J.
AU - Aboud, S.
AU - Goodnick, Stephen
AU - Thornton, Trevor
AU - Saraniti, Marco
PY - 2004
Y1 - 2004
N2 - We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.
AB - We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.
KW - Frequency analysis
KW - Full-band simulation
KW - Germanium
KW - High-K dielectric
KW - SOI MOSFET
UR - http://www.scopus.com/inward/record.url?scp=6344287657&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=6344287657&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344287657
SN - 0972842276
SN - 9780972842273
VL - 2
SP - 25
EP - 28
BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
A2 - Laudon, M.
A2 - Romanowicz, B.
ER -