Abstract
We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.
| Original language | English (US) |
|---|---|
| Title of host publication | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
| Editors | M. Laudon, B. Romanowicz |
| Pages | 25-28 |
| Number of pages | 4 |
| State | Published - Nov 2 2004 |
| Event | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004 |
Publication series
| Name | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
|---|---|
| Volume | 2 |
Other
| Other | 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 3/7/04 → 3/11/04 |
Keywords
- Frequency analysis
- Full-band simulation
- Germanium
- High-K dielectric
- SOI MOSFET
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Beysserie, S., Branlard, J., Aboud, S., Goodnick, S., Thornton, T., & Saraniti, M. (2004). Full-band particle-based simulation of germanium-on-insulator FETs. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 25-28). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).