@inproceedings{34968d342a0c4614a75649fbaed5e465,
title = "Full-band particle-based simulation of germanium-on-insulator FETs",
abstract = "We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.",
keywords = "Frequency analysis, Full-band simulation, Germanium, High-K dielectric, SOI MOSFET",
author = "S. Beysserie and J. Branlard and S. Aboud and Stephen Goodnick and Trevor Thornton and Marco Saraniti",
year = "2004",
month = nov,
day = "2",
language = "English (US)",
isbn = "0972842276",
series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",
pages = "25--28",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",
note = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 ; Conference date: 07-03-2004 Through 11-03-2004",
}