Abstract

In this work, Indium Antimonide (InSb) quantum well transistors are investigated using full-band Cellular Monte Carlo simulations. Both Depletion and Enhancement transistors are simulated, the latter being modeled using a deep recess gate. The steady-state characteristics of the devices are analyzed showing an average sub-threshold slope of 326 mV/dec and a DIBL of 569 mV/V. The small-signal behavior of the depletion and enhancement mode transistors is also investigated, and an average cut-off frequency of 380 GHz is computed. Finally, a comparison is performed between the different transistors showing all the advantages of the deep recess gate configuration such as a better sub-threshold slope and cutoff frequency.

Original languageEnglish (US)
Pages (from-to)483-486
Number of pages4
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 1 2006

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Keywords

  • Indium Antimonide
  • Monte Carlo
  • Quantum well transistor
  • Simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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