Abstract

In this work, Indium Antimonide (InSb) quantum well transistors are investigated using full-band Cellular Monte Carlo simulations. Both Depletion and Enhancement transistors are simulated, the latter being modeled using a deep recess gate. The steady-state characteristics of the devices are analyzed showing an average sub-threshold slope of 326 mV/dec and a DIBL of 569 mV/V. The small-signal behavior of the depletion and enhancement mode transistors is also investigated, and an average cut-off frequency of 380 GHz is computed. Finally, a comparison is performed between the different transistors showing all the advantages of the deep recess gate configuration such as a better sub-threshold slope and cutoff frequency.

Original languageEnglish (US)
Pages (from-to)483-486
Number of pages4
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 2006

Fingerprint

Quantum Well
Depletion
Semiconductor quantum wells
Slope
Transistors
transistors
Enhancement
quantum wells
recesses
Cutoff frequency
Simulation
depletion
cut-off
simulation
Monte Carlo Simulation
slopes
Indium
Configuration
thresholds
augmentation

Keywords

  • Indium Antimonide
  • Monte Carlo
  • Quantum well transistor
  • Simulation

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors. / Faralli, Nicolas; Markandeya, Himanshu; Branlard, Julien; Saraniti, Marco; Goodnick, Stephen; Ferry, David K.

In: Journal of Computational Electronics, Vol. 5, No. 4, 12.2006, p. 483-486.

Research output: Contribution to journalArticle

Faralli, Nicolas ; Markandeya, Himanshu ; Branlard, Julien ; Saraniti, Marco ; Goodnick, Stephen ; Ferry, David K. / Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors. In: Journal of Computational Electronics. 2006 ; Vol. 5, No. 4. pp. 483-486.
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