Abstract
In this work, Indium Antimonide (InSb) quantum well transistors are investigated using full-band Cellular Monte Carlo simulations. Both Depletion and Enhancement transistors are simulated, the latter being modeled using a deep recess gate. The steady-state characteristics of the devices are analyzed showing an average sub-threshold slope of 326 mV/dec and a DIBL of 569 mV/V. The small-signal behavior of the depletion and enhancement mode transistors is also investigated, and an average cut-off frequency of 380 GHz is computed. Finally, a comparison is performed between the different transistors showing all the advantages of the deep recess gate configuration such as a better sub-threshold slope and cutoff frequency.
Original language | English (US) |
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Pages (from-to) | 483-486 |
Number of pages | 4 |
Journal | Journal of Computational Electronics |
Volume | 5 |
Issue number | 4 |
DOIs | |
State | Published - Dec 2006 |
Keywords
- Indium Antimonide
- Monte Carlo
- Quantum well transistor
- Simulation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering