Full-band Monte Carlo simulations of photo excitation in silicon diode structures

S. Aboud, Marco Saraniti, Stephen Goodnick, A. Brodschelm, A. Leitenstorfer

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm-1), and can be attributed to momentum relaxation.

Original languageEnglish (US)
Pages (from-to)S301-S303
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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