Full-band Monte Carlo simulations of photo excitation in silicon diode structures

S. Aboud; Marco Saraniti; Stephen Goodnick; A. Brodschelm; A. Leitenstorfer

doi:10.1088/0268-1242/19/4/101

Full-band Monte Carlo simulations of photo excitation in silicon diode structures

S. Aboud, Marco Saraniti, Stephen Goodnick, A. Brodschelm, A. Leitenstorfer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm^-1), and can be attributed to momentum relaxation.

Original language	English (US)
Pages (from-to)	S301-S303
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/101
State	Published - Apr 1 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Full-band Monte Carlo simulations of photo excitation in silicon diode structures",

abstract = "In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm-1), and can be attributed to momentum relaxation.",

author = "S. Aboud and Marco Saraniti and Stephen Goodnick and A. Brodschelm and A. Leitenstorfer",

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T1 - Full-band Monte Carlo simulations of photo excitation in silicon diode structures

AU - Aboud, S.

AU - Saraniti, Marco

AU - Goodnick, Stephen

AU - Brodschelm, A.

AU - Leitenstorfer, A.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm-1), and can be attributed to momentum relaxation.

AB - In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm-1), and can be attributed to momentum relaxation.

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JO - Semiconductor Science and Technology

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IS - 4 SPEC. ISS.

ER -

Full-band Monte Carlo simulations of photo excitation in silicon diode structures

Abstract

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