In this study, a full-band particle-based simulator is used to model photo-generated electron-hole pairs in Si to investigate ultra-fast charge transport. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (greater than 100 kV cm-1), and can be attributed to momentum relaxation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry