Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS

Niels Fitzer, Angelika Kuligk, Ronald Redmer, Martin Städele, Stephen Goodnick, Wolfgang Schattke

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Abstract

We study the high-field transport in GaAs and ZnS based on ab initio band structures determined within density-functional theory using an exact exchange formalism with a local-density approximation for correlations. The transport properties are gained from ensemble Monte Carlo simulations where all relevant scattering mechanisms are considered including a realistic impact ionization rate. Important results are shown for the drift velocity, the mean kinetic energy, and the valley occupation.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number20
DOIs
StatePublished - May 7 2003

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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