Abstract
We study the high-field transport in GaAs and ZnS based on ab initio band structures determined within density-functional theory using an exact exchange formalism with a local-density approximation for correlations. The transport properties are gained from ensemble Monte Carlo simulations where all relevant scattering mechanisms are considered including a realistic impact ionization rate. Important results are shown for the drift velocity, the mean kinetic energy, and the valley occupation.
Original language | English (US) |
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Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 67 |
Issue number | 20 |
DOIs | |
State | Published - May 7 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics