Abstract

Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrödinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.

Original languageEnglish (US)
Title of host publication14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages645-649
Number of pages5
ISBN (Print)9781479956227
DOIs
StatePublished - Nov 26 2014
Event2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada
Duration: Aug 18 2014Aug 21 2014

Other

Other2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
CountryCanada
CityToronto
Period8/18/148/21/14

Fingerprint

Field-effect Transistor
Nanowires
Field effect transistors
nanowires
field effect transistors
Monte Carlo Simulation
Quantum Transport
simulation
Transport Equation
Siméon Denis Poisson
transistors
Three-dimensional
Model
Monte Carlo simulation
Simulation

Keywords

  • FET. InGaAs
  • Full band
  • Monte Carlo
  • Nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation
  • Instrumentation

Cite this

Hathwar, R., Saraniti, M., & Goodnick, S. (2014). Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors. In 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 (pp. 645-649). [6968090] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2014.6968090

Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors. / Hathwar, R.; Saraniti, Marco; Goodnick, Stephen.

14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 645-649 6968090.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hathwar, R, Saraniti, M & Goodnick, S 2014, Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors. in 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014., 6968090, Institute of Electrical and Electronics Engineers Inc., pp. 645-649, 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, Toronto, Canada, 8/18/14. https://doi.org/10.1109/NANO.2014.6968090
Hathwar R, Saraniti M, Goodnick S. Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors. In 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 645-649. 6968090 https://doi.org/10.1109/NANO.2014.6968090
Hathwar, R. ; Saraniti, Marco ; Goodnick, Stephen. / Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors. 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 645-649
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