Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrödinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781479956227
StatePublished - Nov 26 2014
Event2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada
Duration: Aug 18 2014Aug 21 2014

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Electronic)1944-9399


Other2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014


  • FET. InGaAs
  • Full band
  • Monte Carlo
  • Nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation
  • Instrumentation


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