Abstract

Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrödinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages645-649
Number of pages5
ISBN (Electronic)9781479956227
DOIs
StatePublished - Nov 26 2014
Event2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada
Duration: Aug 18 2014Aug 21 2014

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Electronic)1944-9399

Other

Other2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
CountryCanada
CityToronto
Period8/18/148/21/14

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Keywords

  • FET. InGaAs
  • Full band
  • Monte Carlo
  • Nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation
  • Instrumentation

Cite this

Hathwar, R., Saraniti, M., & Goodnick, S. (2014). Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors. In Proceedings of the IEEE Conference on Nanotechnology (pp. 645-649). [6968090] (Proceedings of the IEEE Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2014.6968090