Full-band CA/Monte Carlo modeling of ultrasmall FETs

S. J. Wigger; Stephen Goodnick; Marco Saraniti

doi:10.1006/spmi.2000.0860

Full-band CA/Monte Carlo modeling of ultrasmall FETs

S. J. Wigger, Stephen Goodnick, Marco Saraniti

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.

Original language	English (US)
Pages (from-to)	417-420
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0860
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0860

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title = "Full-band CA/Monte Carlo modeling of ultrasmall FETs",

abstract = "The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.",

author = "Wigger, {S. J.} and Stephen Goodnick and Marco Saraniti",

note = "Funding Information: Acknowledgements—The authors would like to thank Dragica Vasileska for all her assistance. The authors would also like to acknowledge the support of this research by the National Science Foundation Grant ECS-9976484.; 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

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doi = "10.1006/spmi.2000.0860",

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AU - Wigger, S. J.

AU - Goodnick, Stephen

AU - Saraniti, Marco

N1 - Funding Information: Acknowledgements—The authors would like to thank Dragica Vasileska for all her assistance. The authors would also like to acknowledge the support of this research by the National Science Foundation Grant ECS-9976484.

PY - 2000/5

Y1 - 2000/5

N2 - The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.

AB - The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.

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DO - 10.1006/spmi.2000.0860

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T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Full-band CA/Monte Carlo modeling of ultrasmall FETs

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