Full-band CA/Monte Carlo modeling of ultrasmall FETs

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The modeling of ultra-small MOSFETs is presented using a newly developed full-band, hybrid ensemble Monte Carlo (EMC)-cellular automata (CA) device simulator. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory-consuming CA method and the slower EMC method. In order to efficiently model 3D ultra-small FETs, the hybrid algorithm is coupled self-consistently with a 2D and 3D multi-grid Poisson solver.

Original languageEnglish (US)
Pages (from-to)417-420
Number of pages4
JournalSuperlattices and Microstructures
Volume27
Issue number5
DOIs
StatePublished - May 2000
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: Dec 6 1999Dec 10 1999

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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