Abstract
The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm2). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, Jo, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized (100) and texturized surfaces. The values of Jo on the untexturized samples were lowest, and the Jo decreased with decreasing doping. Large-area (>8 cm2), point-contact cells with shallow phosphorus diffusions on the sunward surface were fabricated. The open-circuit voltage of a cell of this type is 0.706 V, and the active-area efficiency is 22.3% at one sun (0.100 W/cm2), 25°C.
Original language | English (US) |
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Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
Editors | Anon |
Publisher | Publ by IEEE |
Pages | 538-544 |
Number of pages | 7 |
Volume | 1 |
State | Published - 1988 |
Externally published | Yes |
Event | Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: Sep 26 1988 → Sep 30 1988 |
Other
Other | Twentieth IEEE Photovoltaic Specialists Conference - 1988 |
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City | Las Vegas, NV, USA |
Period | 9/26/88 → 9/30/88 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics