Front and back surface fields for point-contact solar cells

Richard King; R. A. Sinton; R. M. Swanson

Front and back surface fields for point-contact solar cells

Richard King, R. A. Sinton, R. M. Swanson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm²). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, J_o, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized (100) and texturized surfaces. The values of J_o on the untexturized samples were lowest, and the J_o decreased with decreasing doping. Large-area (>8 cm²), point-contact cells with shallow phosphorus diffusions on the sunward surface were fabricated. The open-circuit voltage of a cell of this type is 0.706 V, and the active-area efficiency is 22.3% at one sun (0.100 W/cm²), 25°C.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Editors	Anon
Publisher	Publ by IEEE
Pages	538-544
Number of pages	7
Volume	1
State	Published - 1988
Externally published	Yes
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: Sep 26 1988 → Sep 30 1988

Other

Other	Twentieth IEEE Photovoltaic Specialists Conference - 1988
City	Las Vegas, NV, USA
Period	9/26/88 → 9/30/88

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

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title = "Front and back surface fields for point-contact solar cells",

abstract = "The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm2). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, Jo, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized (100) and texturized surfaces. The values of Jo on the untexturized samples were lowest, and the Jo decreased with decreasing doping. Large-area (>8 cm2), point-contact cells with shallow phosphorus diffusions on the sunward surface were fabricated. The open-circuit voltage of a cell of this type is 0.706 V, and the active-area efficiency is 22.3% at one sun (0.100 W/cm2), 25°C.",

author = "Richard King and Sinton, {R. A.} and Swanson, {R. M.}",

year = "1988",

language = "English (US)",

volume = "1",

pages = "538--544",

editor = "Anon",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Publ by IEEE",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

}

TY - GEN

T1 - Front and back surface fields for point-contact solar cells

AU - King, Richard

AU - Sinton, R. A.

AU - Swanson, R. M.

PY - 1988

Y1 - 1988

N2 - The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm2). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, Jo, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized (100) and texturized surfaces. The values of Jo on the untexturized samples were lowest, and the Jo decreased with decreasing doping. Large-area (>8 cm2), point-contact cells with shallow phosphorus diffusions on the sunward surface were fabricated. The open-circuit voltage of a cell of this type is 0.706 V, and the active-area efficiency is 22.3% at one sun (0.100 W/cm2), 25°C.

AB - The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm2). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, Jo, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized (100) and texturized surfaces. The values of Jo on the untexturized samples were lowest, and the Jo decreased with decreasing doping. Large-area (>8 cm2), point-contact cells with shallow phosphorus diffusions on the sunward surface were fabricated. The open-circuit voltage of a cell of this type is 0.706 V, and the active-area efficiency is 22.3% at one sun (0.100 W/cm2), 25°C.

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M3 - Conference contribution

AN - SCOPUS:0024180081

VL - 1

SP - 538

EP - 544

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

A2 - Anon, null

PB - Publ by IEEE

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

Front and back surface fields for point-contact solar cells

Abstract

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ASJC Scopus subject areas

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