Front and back surface fields for point-contact solar cells

Richard King, R. A. Sinton, R. M. Swanson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

39 Scopus citations

Abstract

The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm2). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, Jo, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized (100) and texturized surfaces. The values of Jo on the untexturized samples were lowest, and the Jo decreased with decreasing doping. Large-area (>8 cm2), point-contact cells with shallow phosphorus diffusions on the sunward surface were fabricated. The open-circuit voltage of a cell of this type is 0.706 V, and the active-area efficiency is 22.3% at one sun (0.100 W/cm2), 25°C.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Pages538-544
Number of pages7
Volume1
StatePublished - 1988
Externally publishedYes
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: Sep 26 1988Sep 30 1988

Other

OtherTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA
Period9/26/889/30/88

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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