@inproceedings{a60d09d773a34abaa4ca38a73497a82e,
title = "From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates",
abstract = "The formation of self-assembled InAs quantum dots is investigated as the growth time increases from 3.6 to 12 seconds at a low growth rate. The morphological evolution from a rough surface at a short length scale to an extended 2D InAs flat area, and finally to the 3D InAs islands is followed using atomic force microscopy, photoluminescence and transmission electron microscopy. We show that micrometer long terraces with 2 and 3 monolayers thicknesses can co-exist even though 3 monolayers is beyond the critical thickness. As the quantum dots are nucleated the 3 monolayers thick terrace is depleted by the 3D islands.",
keywords = "InAs quantum wells, monolayer flat islands, quantum dots, style",
author = "G. Torelly and R. Jakomin and Pires, {M. P.} and Dornelas, {L. P.} and R. Prioli and Caldas, {P. G.} and H. Xie and Fernando Ponce and Souza, {P. L.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 30th Symposium on Microelectronics Technology and Devices, SBMicro 2015 ; Conference date: 31-08-2015 Through 04-09-2015",
year = "2015",
month = oct,
day = "13",
doi = "10.1109/SBMicro.2015.7298133",
language = "English (US)",
series = "SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices",
}