From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates

G. Torelly, R. Jakomin, M. P. Pires, L. P. Dornelas, R. Prioli, P. G. Caldas, H. Xie, Fernando Ponce, P. L. Souza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The formation of self-assembled InAs quantum dots is investigated as the growth time increases from 3.6 to 12 seconds at a low growth rate. The morphological evolution from a rough surface at a short length scale to an extended 2D InAs flat area, and finally to the 3D InAs islands is followed using atomic force microscopy, photoluminescence and transmission electron microscopy. We show that micrometer long terraces with 2 and 3 monolayers thicknesses can co-exist even though 3 monolayers is beyond the critical thickness. As the quantum dots are nucleated the 3 monolayers thick terrace is depleted by the 3D islands.

Original languageEnglish (US)
Title of host publicationSBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467371636
DOIs
StatePublished - Oct 13 2015
Event30th Symposium on Microelectronics Technology and Devices, SBMicro 2015 - Salvador, Bahia, Brazil
Duration: Aug 31 2015Sep 4 2015

Other

Other30th Symposium on Microelectronics Technology and Devices, SBMicro 2015
CountryBrazil
CitySalvador, Bahia
Period8/31/159/4/15

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Keywords

  • InAs quantum wells
  • monolayer flat islands
  • quantum dots
  • style

ASJC Scopus subject areas

  • Software
  • Electrical and Electronic Engineering

Cite this

Torelly, G., Jakomin, R., Pires, M. P., Dornelas, L. P., Prioli, R., Caldas, P. G., Xie, H., Ponce, F., & Souza, P. L. (2015). From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates. In SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices [7298133] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SBMicro.2015.7298133