Fringing field effects in semiconductor nanowire double heterostructures

Jun Hu, Yang Liu, Cun-Zheng Ning, Robert Dutton, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al 0.2Ga 0.8N /GaNDH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7211
DOIs
StatePublished - 2009
EventPhysics and Simulation of Optoelectronic Devices XVII - San Jose, CA, United States
Duration: Jan 26 2009Jan 29 2009

Other

OtherPhysics and Simulation of Optoelectronic Devices XVII
CountryUnited States
CitySan Jose, CA
Period1/26/091/29/09

Keywords

  • Carrier injection
  • Double heterostructures
  • Fringing field effects
  • Nanowires

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Hu, J., Liu, Y., Ning, C-Z., Dutton, R., & Kang, S. M. (2009). Fringing field effects in semiconductor nanowire double heterostructures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7211). [72110Q] https://doi.org/10.1117/12.809320