Fringing field effects in semiconductor nanowire double heterostructures

Jun Hu; Yang Liu; Cun-Zheng Ning; Robert Dutton; Sung Mo Kang

doi:10.1117/12.809320

Fringing field effects in semiconductor nanowire double heterostructures

Jun Hu, Yang Liu, Cun-Zheng Ning, Robert Dutton, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al _0.2Ga _0.8N /GaNDH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7211
DOIs	https://doi.org/10.1117/12.809320
State	Published - 2009
Event	Physics and Simulation of Optoelectronic Devices XVII - San Jose, CA, United States Duration: Jan 26 2009 → Jan 29 2009

Other

Other	Physics and Simulation of Optoelectronic Devices XVII
Country/Territory	United States
City	San Jose, CA
Period	1/26/09 → 1/29/09

Keywords

Carrier injection
Double heterostructures
Fringing field effects
Nanowires

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.809320

Cite this

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title = "Fringing field effects in semiconductor nanowire double heterostructures",

abstract = "This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al 0.2Ga 0.8N /GaNDH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.",

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author = "Jun Hu and Yang Liu and Cun-Zheng Ning and Robert Dutton and Kang, {Sung Mo}",

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doi = "10.1117/12.809320",

language = "English (US)",

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note = "Physics and Simulation of Optoelectronic Devices XVII ; Conference date: 26-01-2009 Through 29-01-2009",

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T1 - Fringing field effects in semiconductor nanowire double heterostructures

AU - Hu, Jun

AU - Liu, Yang

AU - Ning, Cun-Zheng

AU - Dutton, Robert

AU - Kang, Sung Mo

PY - 2009

Y1 - 2009

N2 - This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al 0.2Ga 0.8N /GaNDH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.

AB - This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al 0.2Ga 0.8N /GaNDH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.

KW - Carrier injection

KW - Double heterostructures

KW - Fringing field effects

KW - Nanowires

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DO - 10.1117/12.809320

M3 - Conference contribution

AN - SCOPUS:65349157825

VL - 7211

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices XVII

Y2 - 26 January 2009 through 29 January 2009

ER -

Fringing field effects in semiconductor nanowire double heterostructures

Abstract

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Keywords

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