Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations

J. Branlard, S. Aboud, P. Osuch, Stephen Goodnick, Marco Saraniti

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices. Several GaAs and Si devices have been simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.

Original languageEnglish (US)
Pages (from-to)227-233
Number of pages7
JournalMonte Carlo Methods and Applications
Volume10
Issue number3-4
DOIs
StatePublished - Dec 2004

Keywords

  • Fourier Decomposition
  • Full-band
  • GaAs MESFETs
  • Particle-based simulation
  • SOI MOSFETs
  • Small-signal analysis

ASJC Scopus subject areas

  • Statistics and Probability
  • Applied Mathematics

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