Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

J. Branlard; S. Aboud; S. Goodnick; M. Saraniti

doi:10.1023/B:JCEL.0000011427.63034.4e

Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

J. Branlard, S. Aboud, S. Goodnick, M. Saraniti

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.

Original language	English (US)
Pages (from-to)	213-217
Number of pages	5
Journal	Journal of Computational Electronics
Volume	2
Issue number	2-4
DOIs	https://doi.org/10.1023/B:JCEL.0000011427.63034.4e
State	Published - Dec 1 2003

Keywords

3D particle-based simulation
GaAs MESFET
dual gate structures
frequency analysis
full-band

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1023/B:JCEL.0000011427.63034.4e

Cite this

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abstract = "The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.",

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AU - Goodnick, S.

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AB - The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.

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KW - frequency analysis

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Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

Abstract

Keywords

ASJC Scopus subject areas

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