Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

J. Branlard, S. Aboud, S. Goodnick, M. Saraniti

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The goal of this contribution is to use a three dimensional (3D) full-band particle-based simulator to investigate 3D scaling effects of static and dynamic current-voltage characteristics of GaAs MESFET structures. The full-band particle-based simulator is also applied to a novel dual-gate GaAs MESFET structure.

Original languageEnglish (US)
Pages (from-to)213-217
Number of pages5
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
StatePublished - Dec 1 2003

Keywords

  • 3D particle-based simulation
  • GaAs MESFET
  • dual gate structures
  • frequency analysis
  • full-band

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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