Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

B. N. Davidson, G. Lucovsky, G. N. Parsons, Robert Nemanich, A. Esser, K. Seibert, H. Kurz

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A model for free-carrier relaxation, including dispersion in the dielectric function of the host is developed for a-Si and a-Si:H. The model is applicable for probe-beam pulse energies in the spectral regime of the absorption edge, from ∼1-3 eV.

Original languageEnglish (US)
Pages (from-to)579-581
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989
Externally publishedYes

Fingerprint

Amorphous silicon
amorphous silicon
Permittivity
Optical properties
permittivity
optical properties
Thin films
thin films
probes
pulses
energy

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Free carrier absorption and the transient optical properties of amorphous silicon thin films : A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant. / Davidson, B. N.; Lucovsky, G.; Parsons, G. N.; Nemanich, Robert; Esser, A.; Seibert, K.; Kurz, H.

In: Journal of Non-Crystalline Solids, Vol. 114, No. PART 2, 02.12.1989, p. 579-581.

Research output: Contribution to journalArticle

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