Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

B. N. Davidson; G. Lucovsky; G. N. Parsons; R. J. Nemanich; A. Esser; K. Seibert; H. Kurz

doi:10.1016/0022-3093(89)90656-X

Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

B. N. Davidson, G. Lucovsky, G. N. Parsons, R. J. Nemanich, A. Esser, K. Seibert, H. Kurz

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A model for free-carrier relaxation, including dispersion in the dielectric function of the host is developed for a-Si and a-Si:H. The model is applicable for probe-beam pulse energies in the spectral regime of the absorption edge, from ∼1-3 eV.

Original language	English (US)
Pages (from-to)	579-581
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90656-X
State	Published - Dec 2 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90656-X

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Davidson, B. N., Lucovsky, G., Parsons, G. N., Nemanich, R. J., Esser, A., Seibert, K., & Kurz, H. (1989). Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant. Journal of Non-Crystalline Solids, 114(PART 2), 579-581. https://doi.org/10.1016/0022-3093(89)90656-X

Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant. / Davidson, B. N.; Lucovsky, G.; Parsons, G. N. et al.
In: Journal of Non-Crystalline Solids, Vol. 114, No. PART 2, 02.12.1989, p. 579-581.

Research output: Contribution to journal › Article › peer-review

Davidson, BN, Lucovsky, G, Parsons, GN, Nemanich, RJ, Esser, A, Seibert, K & Kurz, H 1989, 'Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant', Journal of Non-Crystalline Solids, vol. 114, no. PART 2, pp. 579-581. https://doi.org/10.1016/0022-3093(89)90656-X

Davidson BN, Lucovsky G, Parsons GN, Nemanich RJ, Esser A, Seibert K et al. Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant. Journal of Non-Crystalline Solids. 1989 Dec 2;114(PART 2):579-581. doi: 10.1016/0022-3093(89)90656-X

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abstract = "A model for free-carrier relaxation, including dispersion in the dielectric function of the host is developed for a-Si and a-Si:H. The model is applicable for probe-beam pulse energies in the spectral regime of the absorption edge, from ∼1-3 eV.",

author = "Davidson, {B. N.} and G. Lucovsky and Parsons, {G. N.} and Nemanich, {R. J.} and A. Esser and K. Seibert and H. Kurz",

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AU - Parsons, G. N.

AU - Nemanich, R. J.

AU - Esser, A.

AU - Seibert, K.

AU - Kurz, H.

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Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

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