A model for free-carrier relaxation, including dispersion in the dielectric function of the host is developed for a-Si and a-Si:H. The model is applicable for probe-beam pulse energies in the spectral regime of the absorption edge, from ∼1-3 eV.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry