Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

B. N. Davidson, G. Lucovsky, G. N. Parsons, R. J. Nemanich, A. Esser, K. Seibert, H. Kurz

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A model for free-carrier relaxation, including dispersion in the dielectric function of the host is developed for a-Si and a-Si:H. The model is applicable for probe-beam pulse energies in the spectral regime of the absorption edge, from ∼1-3 eV.

Original languageEnglish (US)
Pages (from-to)579-581
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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