Abstract

Four-junction solar cells are designed using lattice-matched II-VI (ZnCdSeTe) and III-V (AlGaAsSb) semiconductors grown on GaSb substrates. These materials have a zinc blende crystal structure, similar thermal expansion coefficients, and bandgaps that cover the entire solar spectrum. Numerical simulations of the energy conversion efficiencies of various designs for both the AMO and AM 1.5D spectra are performed using published material parameters. These results indicate that the achievable 1 sun AMO efficiency is 43% for an optimal design and 40% for a more practical design; for comparison the ideal limit provided by Henry's model is 49%. While for the AM 1.5D spectrum an optimal design can reach 46% under 1 sun and 55% under 1000 suns while a more practical design can reach 44 and 54%, respectively; for comparison Henry's model gives 51 and 62%, respectively.

Original languageEnglish (US)
Pages (from-to)328-333
Number of pages6
JournalProgress in Photovoltaics: Research and Applications
Volume18
Issue number5
DOIs
StatePublished - Aug 2010

Fingerprint

Crystal lattices
Solar cells
solar cells
Semiconductor materials
Sun
Energy conversion
sun
Conversion efficiency
Thermal expansion
Zinc
Energy gap
Crystal structure
solar spectra
energy conversion efficiency
Computer simulation
Substrates
thermal expansion
zinc
crystal structure
coefficients

Keywords

  • GaSb substrate
  • Lattice-matched semiconductors
  • Molecular beam epitaxy
  • Multijunction solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Four-junction solar cells using lattice-matched II-VI and HI-V semiconductors. / Wu, S. N.; Ding, D.; Johnson, Shane; Yu, S. Q.; Zhang, Yong-Hang.

In: Progress in Photovoltaics: Research and Applications, Vol. 18, No. 5, 08.2010, p. 328-333.

Research output: Contribution to journalArticle

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