Formation of uniform nanoscale oxide layers assembled by overlapping oxide lines using atomic force microscopy

Ampere A. Tseng, Taewoo Lee, Andrea Notargiacomo, T. P. Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Atomic force microscopy (AFM) has been widely used for creating nanoscale oxide lines on various material surfaces. The assembling technique used for overlapping an array of these oxide lines into a uniform oxide layer is analytically investigated and experimentally verified. The experimental data of the oxide lines induced at different scanning speeds are analytically correlated to provide the basic formula for the assembling technique. The superposition principle is then applied for simulating the assembling process to extract the criteria for assembling a uniform layer. Experiments have been conducted to verify the reliability of the uniformity criteria analytically obtained and the feasibility of the assembling technique developed. Indeed, a uniform oxide layer can be precisely assembled by following the uniformity criteria developed.

Original languageEnglish (US)
Article number043050
JournalJournal of Micro/Nanolithography, MEMS, and MOEMS
Volume8
Issue number4
DOIs
StatePublished - 2009

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assembling
Oxides
Atomic force microscopy
atomic force microscopy
oxides
Scanning
scanning
Experiments

Keywords

  • Atomic force microscopy (AFM)
  • Local anodic oxidation (LAO)
  • Nanopatterning
  • Oxide mask
  • Silicon
  • Uniformity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Formation of uniform nanoscale oxide layers assembled by overlapping oxide lines using atomic force microscopy. / Tseng, Ampere A.; Lee, Taewoo; Notargiacomo, Andrea; Chen, T. P.

In: Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, No. 4, 043050, 2009.

Research output: Contribution to journalArticle

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