Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3

Daniel Adams, Terry Alford, T. Laursen, F. Deng, R. Morton, S. S. Lau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS. Coffa, A. Polman, R.N. Schwartz
PublisherMaterials Research Society
Pages337-342
Number of pages6
Volume427
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/8/964/12/96

Fingerprint

Refractory metals
Nitridation
Silver
Silicon
Annealing
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Adams, D., Alford, T., Laursen, T., Deng, F., Morton, R., & Lau, S. S. (1996). Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 In S. Coffa, A. Polman, & R. N. Schwartz (Eds.), Materials Research Society Symposium - Proceedings (Vol. 427, pp. 337-342). Materials Research Society.

Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 . / Adams, Daniel; Alford, Terry; Laursen, T.; Deng, F.; Morton, R.; Lau, S. S.

Materials Research Society Symposium - Proceedings. ed. / S. Coffa; A. Polman; R.N. Schwartz. Vol. 427 Materials Research Society, 1996. p. 337-342.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Adams, D, Alford, T, Laursen, T, Deng, F, Morton, R & Lau, SS 1996, Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 in S Coffa, A Polman & RN Schwartz (eds), Materials Research Society Symposium - Proceedings. vol. 427, Materials Research Society, pp. 337-342, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 4/8/96.
Adams D, Alford T, Laursen T, Deng F, Morton R, Lau SS. Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 In Coffa S, Polman A, Schwartz RN, editors, Materials Research Society Symposium - Proceedings. Vol. 427. Materials Research Society. 1996. p. 337-342
Adams, Daniel ; Alford, Terry ; Laursen, T. ; Deng, F. ; Morton, R. ; Lau, S. S. / Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 Materials Research Society Symposium - Proceedings. editor / S. Coffa ; A. Polman ; R.N. Schwartz. Vol. 427 Materials Research Society, 1996. pp. 337-342
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AB - Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

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