Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3

Daniel Adams, Terry Alford, T. Laursen, F. Deng, R. Morton, S. S. Lau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS. Coffa, A. Polman, R.N. Schwartz
PublisherMaterials Research Society
Pages337-342
Number of pages6
Volume427
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/8/964/12/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Adams, D., Alford, T., Laursen, T., Deng, F., Morton, R., & Lau, S. S. (1996). Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 In S. Coffa, A. Polman, & R. N. Schwartz (Eds.), Materials Research Society Symposium - Proceedings (Vol. 427, pp. 337-342). Materials Research Society.