Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH
            3

Daniel Adams; Terry Alford; T. Laursen; F. Deng; R. Morton; S. S. Lau

Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH ₃

Daniel Adams, Terry Alford, T. Laursen, F. Deng, R. Morton, S. S. Lau

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH ₃ at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO ₂ interface to form a TiN(O) surface layer and a TiO/Ti ₅Si ₃ interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	S. Coffa, A. Polman, R.N. Schwartz
Publisher	Materials Research Society
Pages	337-342
Number of pages	6
Volume	427
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

Other

Other	Proceedings of the 1996 MRS Spring Symposium
City	San Francisco, CA, USA
Period	4/8/96 → 4/12/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH ₃ . / Adams, Daniel; Alford, Terry; Laursen, T. et al.
Materials Research Society Symposium - Proceedings. ed. / S. Coffa; A. Polman; R.N. Schwartz. Vol. 427 Materials Research Society, 1996. p. 337-342.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Adams, D, Alford, T, Laursen, T, Deng, F, Morton, R & Lau, SS 1996, Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH ₃ in S Coffa, A Polman & RN Schwartz (eds), Materials Research Society Symposium - Proceedings. vol. 427, Materials Research Society, pp. 337-342, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 4/8/96.

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title = "Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3 ",

abstract = "Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration. ",

author = "Daniel Adams and Terry Alford and T. Laursen and F. Deng and R. Morton and Lau, {S. S.}",

year = "1996",

language = "English (US)",

volume = "427",

pages = "337--342",

editor = "S. Coffa and A. Polman and R.N. Schwartz",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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T1 - Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH 3

AU - Adams, Daniel

AU - Alford, Terry

AU - Laursen, T.

AU - Deng, F.

AU - Morton, R.

AU - Lau, S. S.

PY - 1996

Y1 - 1996

N2 - Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

AB - Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH 3 at temperatures between 400-700 °C for various times. Upon annealing Ti segregates to the surface and alloy/SiO 2 interface to form a TiN(O) surface layer and a TiO/Ti 5Si 3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030402167&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030402167

VL - 427

SP - 337

EP - 342

BT - Materials Research Society Symposium - Proceedings

A2 - Coffa, S.

A2 - Polman, A.

A2 - Schwartz, R.N.

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Formation of TiN-encapsulated silver films by nitridation of silver-refractory metal alloys in NH ₃

Abstract

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ASJC Scopus subject areas

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