@inproceedings{a1d2629a863049c38c864594f34b9815,
title = "FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si.",
abstract = "Double doping of Si by ion implantation of both group V and group III dopants was studied. For the case of Sb as the group V dopant, both Sb and B could be maintained in solution after high temperature heat treatment at concentrations greatly exceeding their solubility limits. With Sb implantation alone, Sb diffusion takes place with a highly enhanced transient diffusion, followed by nucleation of self interstitials into loops at the projected range. In certain double-doped samples this projected range damage was eliminated. In the under-compensated B-Sb case, evidence of stable Sb-B pairs was obtained.",
author = "Culbertson, {R. J.} and Pennycook, {S. J.}",
year = "1987",
month = dec,
day = "1",
language = "English (US)",
isbn = "0931837405",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "391--396",
editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",
booktitle = "Materials Research Society Symposia Proceedings",
note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",
}