R. J. Culbertson, S. J. Pennycook

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


Double doping of Si by ion implantation of both group V and group III dopants was studied. For the case of Sb as the group V dopant, both Sb and B could be maintained in solution after high temperature heat treatment at concentrations greatly exceeding their solubility limits. With Sb implantation alone, Sb diffusion takes place with a highly enhanced transient diffusion, followed by nucleation of self interstitials into loops at the projected range. In certain double-doped samples this projected range damage was eliminated. In the under-compensated B-Sb case, evidence of stable Sb-B pairs was obtained.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Number of pages6
ISBN (Print)0931837405
StatePublished - Dec 1 1987
Externally publishedYes
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Publication series

NameMaterials Research Society Symposia Proceedings
ISSN (Print)0272-9172


OtherBeam-Solid Interact and Transient Processes
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Culbertson, R. J., & Pennycook, S. J. (1987). FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si. In M. O. Thompson, S. T. Picraux, & J. S. Williams (Eds.), Materials Research Society Symposia Proceedings (pp. 391-396). (Materials Research Society Symposia Proceedings; Vol. 74). Materials Research Soc.