FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si.

R. J. Culbertson, S. J. Pennycook

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Double doping of Si by ion implantation of both group V and group III dopants was studied. For the case of Sb as the group V dopant, both Sb and B could be maintained in solution after high temperature heat treatment at concentrations greatly exceeding their solubility limits. With Sb implantation alone, Sb diffusion takes place with a highly enhanced transient diffusion, followed by nucleation of self interstitials into loops at the projected range. In certain double-doped samples this projected range damage was eliminated. In the under-compensated B-Sb case, evidence of stable Sb-B pairs was obtained.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Pages391-396
Number of pages6
ISBN (Print)0931837405
StatePublished - Dec 1 1987
Externally publishedYes
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume74
ISSN (Print)0272-9172

Other

OtherBeam-Solid Interact and Transient Processes
CityBoston, MA, USA
Period12/1/8612/4/86

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Culbertson, R. J., & Pennycook, S. J. (1987). FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si. In M. O. Thompson, S. T. Picraux, & J. S. Williams (Eds.), Materials Research Society Symposia Proceedings (pp. 391-396). (Materials Research Society Symposia Proceedings; Vol. 74). Materials Research Soc.