Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation

A. Posadas; R. Dargis; M. R. Choi; A. Slepko; A. A. Demkov; J. J. Kim; David Smith

doi:10.1116/1.3579598

Formation of single-orientation epitaxial islands of TiSi₂ on Si(001) using Sr passivation

A. Posadas, R. Dargis, M. R. Choi, A. Slepko, A. A. Demkov, J. J. Kim, David Smith

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Abstract

Epitaxial islands of C49-phase TiSi₂ of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr, followed by deposition of Ti in the form of SrTiO₃, which prevents the reaction between Ti and Si. Decomposition of SrTiO₃ at temperatures above 800°C drives off Sr and O completely, leaving epitaxial islands of TiSi₂ dispersed on the Si surface. The TiSi₂ islands have (010) orientation and an in-plane epitaxial relationship of Si [110] TiSi₂ [100]. Density functional calculations of the surface and interface energies show that the island sizes and contact angles are consistent with surface energy minimization.

Original language	English (US)
Article number	03C131
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	3
DOIs	https://doi.org/10.1116/1.3579598
State	Published - May 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{8e0e6bf185ee4081a494724628400078,

title = "Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation",

abstract = "Epitaxial islands of C49-phase TiSi2 of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr, followed by deposition of Ti in the form of SrTiO3, which prevents the reaction between Ti and Si. Decomposition of SrTiO3 at temperatures above 800°C drives off Sr and O completely, leaving epitaxial islands of TiSi2 dispersed on the Si surface. The TiSi2 islands have (010) orientation and an in-plane epitaxial relationship of Si [110] TiSi2 [100]. Density functional calculations of the surface and interface energies show that the island sizes and contact angles are consistent with surface energy minimization.",

author = "A. Posadas and R. Dargis and Choi, {M. R.} and A. Slepko and Demkov, {A. A.} and Kim, {J. J.} and David Smith",

note = "Funding Information: This work was supported by the Office of Naval Research (ONR) under Grant No. N000 14-09-1-0908, the National Science Foundation (NSF) under Grant No. DMR-0548182, and the U.S. Department of Energy (DOE) under Grant No. DE-SC0001878. We also acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2011",

month = may,

doi = "10.1116/1.3579598",

language = "English (US)",

volume = "29",

journal = "Journal of Vacuum Science and Technology B",

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T1 - Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation

AU - Posadas, A.

AU - Dargis, R.

AU - Choi, M. R.

AU - Slepko, A.

AU - Demkov, A. A.

AU - Kim, J. J.

AU - Smith, David

N1 - Funding Information: This work was supported by the Office of Naval Research (ONR) under Grant No. N000 14-09-1-0908, the National Science Foundation (NSF) under Grant No. DMR-0548182, and the U.S. Department of Energy (DOE) under Grant No. DE-SC0001878. We also acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2011/5

Y1 - 2011/5

N2 - Epitaxial islands of C49-phase TiSi2 of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr, followed by deposition of Ti in the form of SrTiO3, which prevents the reaction between Ti and Si. Decomposition of SrTiO3 at temperatures above 800°C drives off Sr and O completely, leaving epitaxial islands of TiSi2 dispersed on the Si surface. The TiSi2 islands have (010) orientation and an in-plane epitaxial relationship of Si [110] TiSi2 [100]. Density functional calculations of the surface and interface energies show that the island sizes and contact angles are consistent with surface energy minimization.

AB - Epitaxial islands of C49-phase TiSi2 of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr, followed by deposition of Ti in the form of SrTiO3, which prevents the reaction between Ti and Si. Decomposition of SrTiO3 at temperatures above 800°C drives off Sr and O completely, leaving epitaxial islands of TiSi2 dispersed on the Si surface. The TiSi2 islands have (010) orientation and an in-plane epitaxial relationship of Si [110] TiSi2 [100]. Density functional calculations of the surface and interface energies show that the island sizes and contact angles are consistent with surface energy minimization.

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Formation of single-orientation epitaxial islands of TiSi₂ on Si(001) using Sr passivation

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