Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation

A. Posadas, R. Dargis, M. R. Choi, A. Slepko, A. A. Demkov, J. J. Kim, David Smith

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Epitaxial islands of C49-phase TiSi2 of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr, followed by deposition of Ti in the form of SrTiO3, which prevents the reaction between Ti and Si. Decomposition of SrTiO3 at temperatures above 800°C drives off Sr and O completely, leaving epitaxial islands of TiSi2 dispersed on the Si surface. The TiSi2 islands have (010) orientation and an in-plane epitaxial relationship of Si [110] TiSi2 [100]. Density functional calculations of the surface and interface energies show that the island sizes and contact angles are consistent with surface energy minimization.

Original languageEnglish (US)
Article number03C131
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - 2011

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Passivation
passivity
surface energy
Interfacial energy
Contact angle
Density functional theory
Decomposition
Substrates
decomposition
optimization
Temperature
strontium titanium oxide
temperature
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation. / Posadas, A.; Dargis, R.; Choi, M. R.; Slepko, A.; Demkov, A. A.; Kim, J. J.; Smith, David.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 3, 03C131, 2011.

Research output: Contribution to journalArticle

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AU - Dargis, R.

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AU - Demkov, A. A.

AU - Kim, J. J.

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