Formation of multiply faulted defects in oxygen implanted silicon-on-insulator material

Supapan Visitserngtrakul, Stephen Krause, Bernhard F. Cordts

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A multiply faulted defect (MFD), has been observed at a density of 10 8 cm-2 in oxygen implanted silicon-on-insulator material at implantation temperatures of ≥600 °C over a dose range from 0.3 to 1.8×1018 cm-2. The MFDs are 40-140 nm long and are created at the upper edge of the high-dose implantation region. They consist of combinations of several discontinuous stacking faults within 2-8 atomic layers which generate an irregularity along the defect. The atomic arrangement of the MFDs indicates that they form by shearing of the lattice due to the volume change associated with oxide precipitation. The defects have a randomly faulted arrangement from cross slip and from the presence of several inhomogeneous nucleation sites along the edge of the same defect.

Original languageEnglish (US)
Pages (from-to)1784-1786
Number of pages3
JournalJournal of Applied Physics
Volume69
Issue number3
DOIs
StatePublished - 1991

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insulators
defects
silicon
oxygen
implantation
dosage
shearing
irregularities
crystal defects
slip
nucleation
oxides
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of multiply faulted defects in oxygen implanted silicon-on-insulator material. / Visitserngtrakul, Supapan; Krause, Stephen; Cordts, Bernhard F.

In: Journal of Applied Physics, Vol. 69, No. 3, 1991, p. 1784-1786.

Research output: Contribution to journalArticle

Visitserngtrakul, Supapan ; Krause, Stephen ; Cordts, Bernhard F. / Formation of multiply faulted defects in oxygen implanted silicon-on-insulator material. In: Journal of Applied Physics. 1991 ; Vol. 69, No. 3. pp. 1784-1786.
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