Formation of metastable bc8 phase from crystalline Si0.5Ge0.5 by high-pressure torsion

Yoshifumi Ikoma; Terumasa Yamasaki; Takahiro Shimizu; Marina Takaira; Masamichi Kohno; Qixin Guo; Martha R. McCartney; David J. Smith; Yasutomo Arai; Zenji Horita

doi:10.1016/j.matchar.2020.110590

Formation of metastable bc8 phase from crystalline Si_0.5Ge_0.5 by high-pressure torsion

Yoshifumi Ikoma, Terumasa Yamasaki, Takahiro Shimizu, Marina Takaira, Masamichi Kohno, Qixin Guo, Martha R. McCartney, David J. Smith, Yasutomo Arai, Zenji Horita

CLAS-NS: Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Si_0.5Ge_0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High-resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si_0.5Ge_0.5 (~9 × 10⁻³ Ω·cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si_0.5Ge_0.5 is similar to that of bc8-Si.

Original language	English (US)
Article number	110590
Journal	Materials Characterization
Volume	169
DOIs	https://doi.org/10.1016/j.matchar.2020.110590
State	Published - Nov 2020

Keywords

HRTEM
High-pressure torsion
Metastable phase
Phase transformations
Semiconductors
Severe plastic deformation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Formation of metastable bc8 phase from crystalline Si_0.5Ge_0.5 by high-pressure torsion. / Ikoma, Yoshifumi; Yamasaki, Terumasa; Shimizu, Takahiro; Takaira, Marina; Kohno, Masamichi; Guo, Qixin; McCartney, Martha R.; Smith, David J.; Arai, Yasutomo; Horita, Zenji.

In: Materials Characterization, Vol. 169, 110590, 11.2020.

Research output: Contribution to journal › Article › peer-review

@article{1ab5cc11c7e348d9a988fd298166c451,

title = "Formation of metastable bc8 phase from crystalline Si0.5Ge0.5 by high-pressure torsion",

abstract = "Si0.5Ge0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High-resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si0.5Ge0.5 (~9 × 10−3 Ω·cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si0.5Ge0.5 is similar to that of bc8-Si.",

keywords = "HRTEM, High-pressure torsion, Metastable phase, Phase transformations, Semiconductors, Severe plastic deformation",

author = "Yoshifumi Ikoma and Terumasa Yamasaki and Takahiro Shimizu and Marina Takaira and Masamichi Kohno and Qixin Guo and McCartney, {Martha R.} and Smith, {David J.} and Yasutomo Arai and Zenji Horita",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (B) (Grant No. JP18H01384 ) from the Japan Society for the Promotion of Science . The authors thank Prof. Junichiro Shiomi of The University of Tokyo for valuable discussion. The authors also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University, and in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University. ",

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AU - Ikoma, Yoshifumi

AU - Yamasaki, Terumasa

AU - Shimizu, Takahiro

AU - Takaira, Marina

AU - Kohno, Masamichi

AU - Guo, Qixin

AU - McCartney, Martha R.

AU - Smith, David J.

AU - Arai, Yasutomo

AU - Horita, Zenji

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (B) (Grant No. JP18H01384 ) from the Japan Society for the Promotion of Science . The authors thank Prof. Junichiro Shiomi of The University of Tokyo for valuable discussion. The authors also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University, and in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University.

PY - 2020/11

Y1 - 2020/11

N2 - Si0.5Ge0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High-resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si0.5Ge0.5 (~9 × 10−3 Ω·cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si0.5Ge0.5 is similar to that of bc8-Si.

AB - Si0.5Ge0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High-resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si0.5Ge0.5 (~9 × 10−3 Ω·cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si0.5Ge0.5 is similar to that of bc8-Si.

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