Formation of complex alkoxides to control layer structure in Sr-Bi-M-O (M: Ta or Nb) perovskite thin films

K. Kato, C. Zheng, J. M. Finder, Sandwip Dey, Y. Torii

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Precursors for layer-structured perovskite thin films of Sr2Bi2Ta3O12.5 or SBT223 and Sr2Bi2Nb3O12.5 or SBN223 were prepared by the reactions of Sr-Bi (2:2) double methoxyethoxide and Ta or Nb methoxyethoxide, followed by partial hydrolysis. By several analytical techniques, such as 1H-, 13C- and 93Nb-NMR (nuclear magnetic resonance) and FT-IR (Fourier transform infrared) the molecular structure of the precursors was found to be similar to the layer-structured perovskite crystal sub-lattice. As a result, the onset of crystallization in the sol-gel derived SBT223 thin films was at a low temperature of 550 °C. By rapid thermal annealing in an oxygen atmosphere, the single-phase perovskite films exhibited preferred (1 1 7) orientation. In contrast to the SBT system, the observed number of the pseudo-perovskite layers of TaO6 octahedral units between Bi2O2 2+ layers in the SBT223 was three. Despite the elongation of the unit cell along the c-axis, 700 °C-heated SBT223 thin film did not exhibit a saturated hysteresis loop due to the small crystallite size.

Original languageEnglish (US)
Pages (from-to)457-464
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume9
Issue number6
DOIs
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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