Formation of cobalt disilicide films on (√3×√3)6H-SiC(0001)

W. Platow, D. K. Wood, K. M. Tracy, J. E. Burnette, Robert Nemanich, D. E. Sayers

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

This paper presents a detailed study of thin Co films grown directly, sequentially, and by codeposition with Si on the (√3×√3)-R30° surface of 6H-SiC(0001). The structure, chemistry, and morphology of the films were determined using x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and atomic force microscopy. For directly deposited Co films (1-8 nm) graphite layers form on top of the film surface during annealing, whereas Co stays mainly unreacted over a temperature range of 300-1000 °C. The formation of CoSi2 is achieved by sequential and codeposition of Co and Si. Films annealed at 550 °C are polycrystalline and further annealing to 650 °C causes no C segregation, but there is islanding of the films. Attempts to improve film morphology and homogeneity including applying a template method and varying growth temperature are also reported.

Original languageEnglish (US)
Article number115312
Pages (from-to)1153121-1153127
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number11
StatePublished - 2001
Externally publishedYes

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Cobalt
cobalt
Annealing
X rays
annealing
Graphite
Growth temperature
Auger electron spectroscopy
Photoelectron spectroscopy
guy wires
x ray absorption
x ray spectroscopy
Auger spectroscopy
homogeneity
electron spectroscopy
Atomic force microscopy
templates
graphite
fine structure
photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Platow, W., Wood, D. K., Tracy, K. M., Burnette, J. E., Nemanich, R., & Sayers, D. E. (2001). Formation of cobalt disilicide films on (√3×√3)6H-SiC(0001). Physical Review B - Condensed Matter and Materials Physics, 63(11), 1153121-1153127. [115312].

Formation of cobalt disilicide films on (√3×√3)6H-SiC(0001). / Platow, W.; Wood, D. K.; Tracy, K. M.; Burnette, J. E.; Nemanich, Robert; Sayers, D. E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 11, 115312, 2001, p. 1153121-1153127.

Research output: Contribution to journalArticle

Platow, W, Wood, DK, Tracy, KM, Burnette, JE, Nemanich, R & Sayers, DE 2001, 'Formation of cobalt disilicide films on (√3×√3)6H-SiC(0001)', Physical Review B - Condensed Matter and Materials Physics, vol. 63, no. 11, 115312, pp. 1153121-1153127.
Platow W, Wood DK, Tracy KM, Burnette JE, Nemanich R, Sayers DE. Formation of cobalt disilicide films on (√3×√3)6H-SiC(0001). Physical Review B - Condensed Matter and Materials Physics. 2001;63(11):1153121-1153127. 115312.
Platow, W. ; Wood, D. K. ; Tracy, K. M. ; Burnette, J. E. ; Nemanich, Robert ; Sayers, D. E. / Formation of cobalt disilicide films on (√3×√3)6H-SiC(0001). In: Physical Review B - Condensed Matter and Materials Physics. 2001 ; Vol. 63, No. 11. pp. 1153121-1153127.
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