Formation of aluminum oxynitride diffusion barriers for Ag metallization

Y. Wang; Terry Alford

doi:10.1063/1.123130

Formation of aluminum oxynitride diffusion barriers for Ag metallization

Y. Wang, Terry Alford

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Aluminum oxynitride (Al_xO_yN_z) diffusion barriers have been formed in the temperature range of 400-725 °C by annealing Ag/Al bilayers on oxidized Si substrates in an ammonia (NH₃) ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with ammonia and oxygen in the ambient and encapsulated the Ag films. The resulting Ag resistivity values are 1.75±0.35 μ cm. Higher processing temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The thermal stability of these diffusion barriers was evaluated by depositing 50 nm of Cu films onto the encapsulated samples, and then annealing in either vacuum or flowing He-0.5%H₂. Results showed that these barriers sustained interdiffusion between Cu and Ag up to 620 °C at least for 30 min in either ambient. This temperature is a 200 °C improvement over previously reported values for the self-encapsulated Cu and Ag films.

Original language	English (US)
Pages (from-to)	52-54
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	1
DOIs	https://doi.org/10.1063/1.123130
State	Published - 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Formation of aluminum oxynitride diffusion barriers for Ag metallization",

abstract = "Aluminum oxynitride (AlxOyNz) diffusion barriers have been formed in the temperature range of 400-725 °C by annealing Ag/Al bilayers on oxidized Si substrates in an ammonia (NH3) ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with ammonia and oxygen in the ambient and encapsulated the Ag films. The resulting Ag resistivity values are 1.75±0.35 μ cm. Higher processing temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The thermal stability of these diffusion barriers was evaluated by depositing 50 nm of Cu films onto the encapsulated samples, and then annealing in either vacuum or flowing He-0.5%H2. Results showed that these barriers sustained interdiffusion between Cu and Ag up to 620 °C at least for 30 min in either ambient. This temperature is a 200 °C improvement over previously reported values for the self-encapsulated Cu and Ag films.",

author = "Y. Wang and Terry Alford",

year = "1999",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Formation of aluminum oxynitride diffusion barriers for Ag metallization

AU - Wang, Y.

AU - Alford, Terry

PY - 1999

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N2 - Aluminum oxynitride (AlxOyNz) diffusion barriers have been formed in the temperature range of 400-725 °C by annealing Ag/Al bilayers on oxidized Si substrates in an ammonia (NH3) ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with ammonia and oxygen in the ambient and encapsulated the Ag films. The resulting Ag resistivity values are 1.75±0.35 μ cm. Higher processing temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The thermal stability of these diffusion barriers was evaluated by depositing 50 nm of Cu films onto the encapsulated samples, and then annealing in either vacuum or flowing He-0.5%H2. Results showed that these barriers sustained interdiffusion between Cu and Ag up to 620 °C at least for 30 min in either ambient. This temperature is a 200 °C improvement over previously reported values for the self-encapsulated Cu and Ag films.

AB - Aluminum oxynitride (AlxOyNz) diffusion barriers have been formed in the temperature range of 400-725 °C by annealing Ag/Al bilayers on oxidized Si substrates in an ammonia (NH3) ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with ammonia and oxygen in the ambient and encapsulated the Ag films. The resulting Ag resistivity values are 1.75±0.35 μ cm. Higher processing temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The thermal stability of these diffusion barriers was evaluated by depositing 50 nm of Cu films onto the encapsulated samples, and then annealing in either vacuum or flowing He-0.5%H2. Results showed that these barriers sustained interdiffusion between Cu and Ag up to 620 °C at least for 30 min in either ambient. This temperature is a 200 °C improvement over previously reported values for the self-encapsulated Cu and Ag films.

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Formation of aluminum oxynitride diffusion barriers for Ag metallization

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