Formation of Al xO yN z barriers for advanced silver metallization

Y. Wang, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silver has been explored as a potential candidate for future advanced interconnects due to its lowest electrical resistivity, when compared with Al and Cu. As in the case of Cu metallization, an additional layer between the Ag film and underneath dielectric is necessary in order to improve adhesion and to block the diffusion of Ag atoms. In this study, thin aluminum oxynitride (Al xO yN z) diffusion barriers have been formed in the temperature range of 400-725 °C by annealing Ag/Al bilayers on oxidized Si substrates in ammonia ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with both the ammonia and oxygen in the ambient and encapsulated the Ag films, Higher process temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The resulting Ag resistivity values are ∼1.75 ± 0.35 μΩ-cm. The thermal stability test of these diffusion barriers showed that these barriers sustained the interdiffusion between Cu and Ag up to 620 °C at least for 30 min in either vacuum or flowing He-0.5% H 2. This temperature is a 200°C improvement over previously reported values for the self-encapsulated Cu and Ag films. X-ray diffraction spectra showed no formation of any high resistive intermetallic compounds, i.e., Ag 3Al, Ag 2Al, and AlAg 3.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsG.S. Oehrlein, K. Maex, Y.-C. Joo, S. Ogawa, J.T. Wetzel
Volume612
StatePublished - 2000
EventMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, United States
Duration: Apr 23 2000Apr 27 2000

Other

OtherMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics
CountryUnited States
CitySan Francisco, CA
Period4/23/004/27/00

Fingerprint

Metallizing
Silver
Diffusion barriers
Ammonia
Interdiffusion (solids)
Rutherford backscattering spectroscopy
Temperature
Spectrometry
Intermetallics
Thermodynamic stability
Adhesion
Vacuum
Annealing
Oxygen
Aluminum
X ray diffraction
Atoms
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, Y., & Alford, T. (2000). Formation of Al xO yN z barriers for advanced silver metallization In G. S. Oehrlein, K. Maex, Y-C. Joo, S. Ogawa, & J. T. Wetzel (Eds.), Materials Research Society Symposium - Proceedings (Vol. 612)

Formation of Al xO yN z barriers for advanced silver metallization . / Wang, Y.; Alford, Terry.

Materials Research Society Symposium - Proceedings. ed. / G.S. Oehrlein; K. Maex; Y.-C. Joo; S. Ogawa; J.T. Wetzel. Vol. 612 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, Y & Alford, T 2000, Formation of Al xO yN z barriers for advanced silver metallization in GS Oehrlein, K Maex, Y-C Joo, S Ogawa & JT Wetzel (eds), Materials Research Society Symposium - Proceedings. vol. 612, Materials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics, San Francisco, CA, United States, 4/23/00.
Wang Y, Alford T. Formation of Al xO yN z barriers for advanced silver metallization In Oehrlein GS, Maex K, Joo Y-C, Ogawa S, Wetzel JT, editors, Materials Research Society Symposium - Proceedings. Vol. 612. 2000
Wang, Y. ; Alford, Terry. / Formation of Al xO yN z barriers for advanced silver metallization Materials Research Society Symposium - Proceedings. editor / G.S. Oehrlein ; K. Maex ; Y.-C. Joo ; S. Ogawa ; J.T. Wetzel. Vol. 612 2000.
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