Formation of a tetrameric, cyclooctane-like, azidochlorogallane, [HClGaN3]4, and related azidogallanes. Exothermic single-source precursors to GaN nanostructures

Jeff McMurran, John Kouvetakis, D. C. Nesting, David Smith, John L. Hubbard

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Abstract

The synthesis of a novel tetrameric gallane, [HClGaN3]4 (1), with a heterocyclic cyclooactane-like structure has been demonstrated. A single- crystal X-ray study reveals that the molecule consists of eight-membered Ga4N4 rings with Ga atoms bridged by the α-nitrogens of the azide groups. [HClGaN3]4 crystallizes in the tetragonal space group space group P42bc, with a = 17.920(3) Å, c = 10.782(3) Å, V = 3462(2) Å3, and Z = 8. On the basis of the mass spectrum, the vapor of the compound consists of the trimer [HC1GaN3]3, which is a low-temperature molecular source for growth of GaN layers on sapphire and Si substrates at 500 °C. Solid 1 decomposes exothermically at 70 °C to yield bulk nanocrystalline wurtzite and zinc blende GaN. The reaction between H2GaCl and LiN3 yields the analogous and extremely simple azidogallane (H2GaN3)(n) (2), which is used to deposit crystalline GaN films at 450 °C. Compound 2 is considerably more reactive than 1, and its decomposition, often initiated at room temperature, yields pure and crystalline nitride material of unusual morphology and microstructure.

Original languageEnglish (US)
Pages (from-to)5233-5237
Number of pages5
JournalJournal of the American Chemical Society
Volume120
Issue number21
DOIs
StatePublished - Jun 3 1998

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Nanostructures
Crystalline materials
Temperature
Azides
Aluminum Oxide
Sapphire
Nitrides
Zinc
Nitrogen
Deposits
Vapors
X-Rays
Single crystals
Decomposition
X rays
Atoms
Microstructure
Molecules
Substrates
Growth

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

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title = "Formation of a tetrameric, cyclooctane-like, azidochlorogallane, [HClGaN3]4, and related azidogallanes. Exothermic single-source precursors to GaN nanostructures",
abstract = "The synthesis of a novel tetrameric gallane, [HClGaN3]4 (1), with a heterocyclic cyclooactane-like structure has been demonstrated. A single- crystal X-ray study reveals that the molecule consists of eight-membered Ga4N4 rings with Ga atoms bridged by the α-nitrogens of the azide groups. [HClGaN3]4 crystallizes in the tetragonal space group space group P42bc, with a = 17.920(3) {\AA}, c = 10.782(3) {\AA}, V = 3462(2) {\AA}3, and Z = 8. On the basis of the mass spectrum, the vapor of the compound consists of the trimer [HC1GaN3]3, which is a low-temperature molecular source for growth of GaN layers on sapphire and Si substrates at 500 °C. Solid 1 decomposes exothermically at 70 °C to yield bulk nanocrystalline wurtzite and zinc blende GaN. The reaction between H2GaCl and LiN3 yields the analogous and extremely simple azidogallane (H2GaN3)(n) (2), which is used to deposit crystalline GaN films at 450 °C. Compound 2 is considerably more reactive than 1, and its decomposition, often initiated at room temperature, yields pure and crystalline nitride material of unusual morphology and microstructure.",
author = "Jeff McMurran and John Kouvetakis and Nesting, {D. C.} and David Smith and Hubbard, {John L.}",
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T1 - Formation of a tetrameric, cyclooctane-like, azidochlorogallane, [HClGaN3]4, and related azidogallanes. Exothermic single-source precursors to GaN nanostructures

AU - McMurran, Jeff

AU - Kouvetakis, John

AU - Nesting, D. C.

AU - Smith, David

AU - Hubbard, John L.

PY - 1998/6/3

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N2 - The synthesis of a novel tetrameric gallane, [HClGaN3]4 (1), with a heterocyclic cyclooactane-like structure has been demonstrated. A single- crystal X-ray study reveals that the molecule consists of eight-membered Ga4N4 rings with Ga atoms bridged by the α-nitrogens of the azide groups. [HClGaN3]4 crystallizes in the tetragonal space group space group P42bc, with a = 17.920(3) Å, c = 10.782(3) Å, V = 3462(2) Å3, and Z = 8. On the basis of the mass spectrum, the vapor of the compound consists of the trimer [HC1GaN3]3, which is a low-temperature molecular source for growth of GaN layers on sapphire and Si substrates at 500 °C. Solid 1 decomposes exothermically at 70 °C to yield bulk nanocrystalline wurtzite and zinc blende GaN. The reaction between H2GaCl and LiN3 yields the analogous and extremely simple azidogallane (H2GaN3)(n) (2), which is used to deposit crystalline GaN films at 450 °C. Compound 2 is considerably more reactive than 1, and its decomposition, often initiated at room temperature, yields pure and crystalline nitride material of unusual morphology and microstructure.

AB - The synthesis of a novel tetrameric gallane, [HClGaN3]4 (1), with a heterocyclic cyclooactane-like structure has been demonstrated. A single- crystal X-ray study reveals that the molecule consists of eight-membered Ga4N4 rings with Ga atoms bridged by the α-nitrogens of the azide groups. [HClGaN3]4 crystallizes in the tetragonal space group space group P42bc, with a = 17.920(3) Å, c = 10.782(3) Å, V = 3462(2) Å3, and Z = 8. On the basis of the mass spectrum, the vapor of the compound consists of the trimer [HC1GaN3]3, which is a low-temperature molecular source for growth of GaN layers on sapphire and Si substrates at 500 °C. Solid 1 decomposes exothermically at 70 °C to yield bulk nanocrystalline wurtzite and zinc blende GaN. The reaction between H2GaCl and LiN3 yields the analogous and extremely simple azidogallane (H2GaN3)(n) (2), which is used to deposit crystalline GaN films at 450 °C. Compound 2 is considerably more reactive than 1, and its decomposition, often initiated at room temperature, yields pure and crystalline nitride material of unusual morphology and microstructure.

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