Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy

Y. Chang, G. Badano, J. Zhao, C. H. Grein, S. Sivananthan, T. Aoki, David Smith

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The surface crater defects on HgCdTe/CdZnTe (211) B epilayers were investigated. The results show that the large number of crater defects observed are either linked to the poor compositional homogeneity developed during crystal growth or to problems in the pretreatment procedure. The dissociation of Te 2 plays an important role in defect formation. The studies also show that the density of surface crater defects can be controlled by adjusting the growth conditions and the pretreatment procedures.

Original languageEnglish (US)
Pages (from-to)4785-4787
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
StatePublished - Dec 8 2003

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craters
molecular beam epitaxy
defects
pretreatment
homogeneity
crystal growth
adjusting
dissociation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy. / Chang, Y.; Badano, G.; Zhao, J.; Grein, C. H.; Sivananthan, S.; Aoki, T.; Smith, David.

In: Applied Physics Letters, Vol. 83, No. 23, 08.12.2003, p. 4785-4787.

Research output: Contribution to journalArticle

Chang, Y. ; Badano, G. ; Zhao, J. ; Grein, C. H. ; Sivananthan, S. ; Aoki, T. ; Smith, David. / Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy. In: Applied Physics Letters. 2003 ; Vol. 83, No. 23. pp. 4785-4787.
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