Formation conditions and atomic structure of the Si(111)-√19 Ni surface

S. A. Parikh, M. Y. Lee, Peter Bennett

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We determined the formation conditions and atomic structure of the Si(111)-√19 Ni surface using Auger electron spectroscopy, reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The √19 phase can be produced by low temperature deposition followed by annealing and quenching from above 860°C. It tends to coexist with a variable density 1 × 1-RC (ring cluster) phase. The intrinsic coverage of the √19 phase alone is approximately 0.15 monolayers, corresponding to three Ni atoms per √19 unit cell. Deposition at 550°C suppresses the 1 × 1-RC phase and creates a well-ordered √19 phase in coexistence with Si 7 × 7. Deposition at 350°C produces silicide islands in a matrix of Si 7 × 7. From high resolution STM images we determined the lattice registration of the √19 phase and present a model for its atomic structure.

Original languageEnglish (US)
Pages (from-to)53-58
Number of pages6
JournalSurface Science
Volume356
Issue number1-3
DOIs
StatePublished - Jun 10 1996

Keywords

  • Auger electron spectroscopy
  • Low index single crystal surfaces
  • Morphology, roughness, and topography
  • Nickel
  • Reflection high-energy electron diffraction (RHEED)
  • Scanning tunneling microscopy
  • Silicon
  • Surface structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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