Abstract
We determined the formation conditions and atomic structure of the Si(111)-√19 Ni surface using Auger electron spectroscopy, reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The √19 phase can be produced by low temperature deposition followed by annealing and quenching from above 860°C. It tends to coexist with a variable density 1 × 1-RC (ring cluster) phase. The intrinsic coverage of the √19 phase alone is approximately 0.15 monolayers, corresponding to three Ni atoms per √19 unit cell. Deposition at 550°C suppresses the 1 × 1-RC phase and creates a well-ordered √19 phase in coexistence with Si 7 × 7. Deposition at 350°C produces silicide islands in a matrix of Si 7 × 7. From high resolution STM images we determined the lattice registration of the √19 phase and present a model for its atomic structure.
Original language | English (US) |
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Pages (from-to) | 53-58 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 356 |
Issue number | 1-3 |
DOIs | |
State | Published - Jun 10 1996 |
Keywords
- Auger electron spectroscopy
- Low index single crystal surfaces
- Morphology, roughness, and topography
- Nickel
- Reflection high-energy electron diffraction (RHEED)
- Scanning tunneling microscopy
- Silicon
- Surface structure
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry