Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation

Y. Wang, M. K. Mikhov, Brian Skromme

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
Pages915-918
Number of pages4
Volume527-529
EditionPART 2
StatePublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Graphite
Encapsulation
Diodes
Annealing
Atomic force microscopy
Photoresists
Leakage currents
Electronic properties
Temperature
Surface morphology
Electric properties
Defects
Electric potential
Processing

Keywords

  • 4H-SiC
  • Annealing
  • Atomic force microscopy
  • Graphite encapsulation
  • Schottky diodes

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Wang, Y., Mikhov, M. K., & Skromme, B. (2006). Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation. In Materials Science Forum (PART 2 ed., Vol. 527-529, pp. 915-918). (Materials Science Forum; Vol. 527-529, No. PART 2).

Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation. / Wang, Y.; Mikhov, M. K.; Skromme, Brian.

Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. p. 915-918 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, Y, Mikhov, MK & Skromme, B 2006, Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation. in Materials Science Forum. PART 2 edn, vol. 527-529, Materials Science Forum, no. PART 2, vol. 527-529, pp. 915-918, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Wang Y, Mikhov MK, Skromme B. Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation. In Materials Science Forum. PART 2 ed. Vol. 527-529. 2006. p. 915-918. (Materials Science Forum; PART 2).
Wang, Y. ; Mikhov, M. K. ; Skromme, Brian. / Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation. Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. pp. 915-918 (Materials Science Forum; PART 2).
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