Formation and properties of schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation

Y. Wang, M. K. Mikhov, Brian Skromme

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
PublisherTrans Tech Publications Ltd
Pages915-918
Number of pages4
EditionPART 2
ISBN (Print)9780878494255
DOIs
StatePublished - Jan 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Keywords

  • 4H-SiC
  • Annealing
  • Atomic force microscopy
  • Graphite encapsulation
  • Schottky diodes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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