An alternative method of silicide formation by direct implantation of high doses of metal ions into polycrystalline silicon is discussed. The doses used were in the region of 5×1017cm2 at energies in excess of 150 keV. Low sheet resistance (<1 Ω/sq.) cobalt disilicide (polycide) layers were formed by this technique and subsequently oxidized to assess process compatibility. The method overcomes the problems associated with metal on poly-Si interdiffusion reactions, such as retarded diffusion due to surface barriers or uneven diffusion due to the presence of grain boundaries in the poly-Si. Hence, the technique can provide a high degree of control over silicide distribution.
|Original language||English (US)|
|Title of host publication||1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf|
|Place of Publication||Piscataway, NJ, United States|
|Publisher||Publ by IEEE|
|Number of pages||7|
|State||Published - 1988|
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