Formation and oxidation of implanted cobalt silicides on polycrystalline-silicon.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An alternative method of silicide formation by direct implantation of high doses of metal ions into polycrystalline silicon is discussed. The doses used were in the region of 5×1017cm2 at energies in excess of 150 keV. Low sheet resistance (<1 Ω/sq.) cobalt disilicide (polycide) layers were formed by this technique and subsequently oxidized to assess process compatibility. The method overcomes the problems associated with metal on poly-Si interdiffusion reactions, such as retarded diffusion due to surface barriers or uneven diffusion due to the presence of grain boundaries in the poly-Si. Hence, the technique can provide a high degree of control over silicide distribution.

Original languageEnglish (US)
Title of host publication1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages198-204
Number of pages7
StatePublished - 1988

ASJC Scopus subject areas

  • Engineering(all)

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