Formation and characterization of silicon films on flexible polymer substrates

P. K. Shetty, N. D. Theodore, J. Ren, Jose Menendez, H. C. Kim, E. Misra, J. W. Mayer, Terry Alford

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Polysilicon thin film transistors on flexible substrates are of considerable interest for applications in flexible displays. This paper investigates the formation of nanocrystalline silicon on flexible, transparent polymer substrates. An 800-nm layer of amorphous silicon was deposited on a polyimide substrate followed by a 20-nm layer of aluminum. Samples were rapid thermal annealed at 900 °C for 20 s, forming silicon nanocrystallites in a porous amorphous silicon film. The films were analyzed using Rutherford backscattering spectrometry, Raman Spectroscopy and cross-section transmission electron microscopy. A mechanism is proposed for the formation of silicon nanocrystallites and pores in the a-Si layer.

Original languageEnglish (US)
Pages (from-to)872-875
Number of pages4
JournalMaterials Letters
Volume59
Issue number8-9
DOIs
StatePublished - Apr 1 2005

Keywords

  • Flexible substrates
  • Metal induced crystallization
  • Polyimide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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