Formation and characterization of silicon films on flexible polymer substrates

P. K. Shetty; N. D. Theodore; J. Ren; Jose Menendez; H. C. Kim; E. Misra; J. W. Mayer; Terry Alford

doi:10.1016/j.matlet.2004.11.034

Formation and characterization of silicon films on flexible polymer substrates

P. K. Shetty, N. D. Theodore, J. Ren, Jose Menendez, H. C. Kim, E. Misra, J. W. Mayer, Terry Alford

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13 Scopus citations

Abstract

Polysilicon thin film transistors on flexible substrates are of considerable interest for applications in flexible displays. This paper investigates the formation of nanocrystalline silicon on flexible, transparent polymer substrates. An 800-nm layer of amorphous silicon was deposited on a polyimide substrate followed by a 20-nm layer of aluminum. Samples were rapid thermal annealed at 900 °C for 20 s, forming silicon nanocrystallites in a porous amorphous silicon film. The films were analyzed using Rutherford backscattering spectrometry, Raman Spectroscopy and cross-section transmission electron microscopy. A mechanism is proposed for the formation of silicon nanocrystallites and pores in the a-Si layer.

Original language	English (US)
Pages (from-to)	872-875
Number of pages	4
Journal	Materials Letters
Volume	59
Issue number	8-9
DOIs	https://doi.org/10.1016/j.matlet.2004.11.034
State	Published - Apr 2005

Keywords

Flexible substrates
Metal induced crystallization
Polyimide

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2004.11.034

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title = "Formation and characterization of silicon films on flexible polymer substrates",

abstract = "Polysilicon thin film transistors on flexible substrates are of considerable interest for applications in flexible displays. This paper investigates the formation of nanocrystalline silicon on flexible, transparent polymer substrates. An 800-nm layer of amorphous silicon was deposited on a polyimide substrate followed by a 20-nm layer of aluminum. Samples were rapid thermal annealed at 900 °C for 20 s, forming silicon nanocrystallites in a porous amorphous silicon film. The films were analyzed using Rutherford backscattering spectrometry, Raman Spectroscopy and cross-section transmission electron microscopy. A mechanism is proposed for the formation of silicon nanocrystallites and pores in the a-Si layer.",

keywords = "Flexible substrates, Metal induced crystallization, Polyimide",

author = "Shetty, {P. K.} and Theodore, {N. D.} and J. Ren and Jose Menendez and Kim, {H. C.} and E. Misra and Mayer, {J. W.} and Terry Alford",

note = "Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0308127) to whom the authors are greatly indebted.",

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T1 - Formation and characterization of silicon films on flexible polymer substrates

AU - Shetty, P. K.

AU - Theodore, N. D.

AU - Ren, J.

AU - Menendez, Jose

AU - Kim, H. C.

AU - Misra, E.

AU - Mayer, J. W.

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0308127) to whom the authors are greatly indebted.

PY - 2005/4

Y1 - 2005/4

N2 - Polysilicon thin film transistors on flexible substrates are of considerable interest for applications in flexible displays. This paper investigates the formation of nanocrystalline silicon on flexible, transparent polymer substrates. An 800-nm layer of amorphous silicon was deposited on a polyimide substrate followed by a 20-nm layer of aluminum. Samples were rapid thermal annealed at 900 °C for 20 s, forming silicon nanocrystallites in a porous amorphous silicon film. The films were analyzed using Rutherford backscattering spectrometry, Raman Spectroscopy and cross-section transmission electron microscopy. A mechanism is proposed for the formation of silicon nanocrystallites and pores in the a-Si layer.

AB - Polysilicon thin film transistors on flexible substrates are of considerable interest for applications in flexible displays. This paper investigates the formation of nanocrystalline silicon on flexible, transparent polymer substrates. An 800-nm layer of amorphous silicon was deposited on a polyimide substrate followed by a 20-nm layer of aluminum. Samples were rapid thermal annealed at 900 °C for 20 s, forming silicon nanocrystallites in a porous amorphous silicon film. The films were analyzed using Rutherford backscattering spectrometry, Raman Spectroscopy and cross-section transmission electron microscopy. A mechanism is proposed for the formation of silicon nanocrystallites and pores in the a-Si layer.

KW - Flexible substrates

KW - Metal induced crystallization

KW - Polyimide

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SP - 872

EP - 875

JO - Materials Letters

JF - Materials Letters

IS - 8-9

ER -

Formation and characterization of silicon films on flexible polymer substrates

Abstract

Keywords

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