Fluctuation microscopy analysis of amorphous silicon models

J. M. Gibson, Michael Treacy

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using computer-generated models we discuss the use of fluctuation electron microscopy (FEM) to identify the structure of amorphous silicon. We show that a combination of variable resolution FEM to measure the correlation length, with correlograph analysis to obtain the structural motif, can pin down structural correlations. We introduce the method of correlograph variance as a promising means of independently measuring the volume fraction of a paracrystalline composite. From comparisons with published data, we affirm that only a composite material of paracrystalline and continuous random network that is substantially paracrystalline could explain the existing experimental data, and point the way to more precise measurements on amorphous semiconductors. The results are of general interest for other classes of disordered materials.

Original languageEnglish (US)
Pages (from-to)74-79
Number of pages6
JournalUltramicroscopy
Volume176
DOIs
StatePublished - May 1 2017

Fingerprint

Amorphous silicon
Electron microscopy
amorphous silicon
electron microscopy
Microscopic examination
microscopy
Amorphous semiconductors
amorphous semiconductors
composite materials
Composite materials
Volume fraction

Keywords

  • Amorphous
  • Fluctuations
  • Medium_range_order
  • Nanodiffraction
  • Silicon
  • STEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Cite this

Fluctuation microscopy analysis of amorphous silicon models. / Gibson, J. M.; Treacy, Michael.

In: Ultramicroscopy, Vol. 176, 01.05.2017, p. 74-79.

Research output: Contribution to journalArticle

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