TY - GEN
T1 - Flexible silicon heterojunction solar cells on 40 μm thin substrates
AU - Balaji, Pradeep
AU - Dauksher, William J.
AU - Bowden, Stuart G.
AU - Augusto, Andre
N1 - Funding Information:
This material is based upon work supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under cooperative Agreement no. EEC-1041895.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Silicon heterojunction solar cells were manufactured on 40 μm thin substrates using standard industrial manufacturing processes. As the thickness of the substrates goes down, bulk Shockley-Read-Hall recombination is less dominant and surface recombination becomes the main loss mechanism at the maximum power point. In this paper we report our latest accomplishments on 40 μm thin silicon heterojunction solar cells. We have achieved implied open-circuit voltages >760 mV and surface saturation current densities < 2 fA/cm2. The best cell has an efficiency of 20.69%, with an open-circuit voltage of 736 mV, a short-circuit current density of 37.17 mA/cm2 and a fill factor of 75.6%. Replacing the thick ITO front layer with an SiO2/ITO bilayer led to a gain of 1.2 ± 0.2 mA/cm2 in current density.
AB - Silicon heterojunction solar cells were manufactured on 40 μm thin substrates using standard industrial manufacturing processes. As the thickness of the substrates goes down, bulk Shockley-Read-Hall recombination is less dominant and surface recombination becomes the main loss mechanism at the maximum power point. In this paper we report our latest accomplishments on 40 μm thin silicon heterojunction solar cells. We have achieved implied open-circuit voltages >760 mV and surface saturation current densities < 2 fA/cm2. The best cell has an efficiency of 20.69%, with an open-circuit voltage of 736 mV, a short-circuit current density of 37.17 mA/cm2 and a fill factor of 75.6%. Replacing the thick ITO front layer with an SiO2/ITO bilayer led to a gain of 1.2 ± 0.2 mA/cm2 in current density.
KW - Flexible photovoltaic cells
KW - SHJ solar cells
KW - silicon
KW - stacked ARC
KW - thin PV cells
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U2 - 10.1109/PVSC40753.2019.8980698
DO - 10.1109/PVSC40753.2019.8980698
M3 - Conference contribution
AN - SCOPUS:85081611853
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1089
EP - 1092
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -