Abstract

In this paper, previous work on chalcogenide-glass (ChG)-based radiation sensors is extended to include the effects of mechanical strain and temperature stress on sensors formed on a flexible polymer substrate. We demonstrate the feasibility of producing inexpensive flexible radiation sensors, which utilize radiation-induced migration of ${\rm Ag}+ ions in germanium selenide (${\rm Ge}-{20}{\rm Se}80) films to produce a decrease in resistance of several orders of magnitude between surface electrodes. This change in resistance can be related to total ionizing dose to give an instantaneous readout of radiation exposure. The ChG films are inherently flexible and this, along with an extremely simple device fabrication process at or near room temperature, allows inexpensive sensor structures to be fabricated on lightweight pliable polymeric substrates such as polyethylene napthalate (PEN). Test samples were irradiated with ionizing radiation (UV light and $60 Cobalt gamma rays). Irradiated samples were subjected to both tensile and compressive stress, and elevated operating temperatures. Stress and exposure to increased ambient temperature had little effect on device resistance. Analysis of the experimental data is supported by the results of COMSOL simulations that model radiation-induced lateral Ag diffusion in ChG.

Original languageEnglish (US)
Article number6949157
Pages (from-to)3432-3437
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014

Keywords

  • Chalcogenide glass
  • UV
  • dosimetry
  • flexible radiation sensor
  • gamma rays
  • polyethylene napthalate (PEN)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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