Abstract

This letter presents the fabrication details and measured performance of a prototype flexible extended-gate ion-sensitive field effect transistor (ISFET) biosensor, manufactured using a metal oxide indium-gallium-zinc oxide thin film transistor and an indium-tin oxide sensing layer on a 125-μm thick flexible plastic substrate. ISFET drain current was shown to respond correctly to the pH buffer concentration with repeatable pH sensitivity observed over multiple cycles. These results demonstrate the initial viability of directly extending flexible plastic substrate organic light emitting diode display technology to the production of low-cost, plastic ISFET biosensors.

Original languageEnglish (US)
Article number6684572
Pages (from-to)937-938
Number of pages2
JournalIEEE Sensors Journal
Volume14
Issue number4
DOIs
StatePublished - Apr 2014

Fingerprint

Ion sensitive field effect transistors
ITO (semiconductors)
bioinstrumentation
Biosensors
metal oxides
plastics
field effect transistors
Plastics
Indium
Oxides
Metals
gallium oxides
ions
Drain current
Organic light emitting diodes (OLED)
Gallium
Substrates
Thin film transistors
Zinc oxide
Tin oxides

Keywords

  • Biosensor
  • flexible electronics
  • IGZO
  • ISFET
  • TFT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Flexible ISFET biosensor using IGZO metal oxide TFTs and an ITO sensing layer. / Smith, Joseph T.; Shah, Sahil S.; Goryll, Michael; Stowell, John R.; Allee, David.

In: IEEE Sensors Journal, Vol. 14, No. 4, 6684572, 04.2014, p. 937-938.

Research output: Contribution to journalArticle

Smith, Joseph T. ; Shah, Sahil S. ; Goryll, Michael ; Stowell, John R. ; Allee, David. / Flexible ISFET biosensor using IGZO metal oxide TFTs and an ITO sensing layer. In: IEEE Sensors Journal. 2014 ; Vol. 14, No. 4. pp. 937-938.
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