Flexible amorphous-silicon non-volatile memory

Nazanin Darbanian, Sameer M. Venugopal, Shrinivas G. Gopalan, David Allee, Lawrence T. Clark

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The development of a flexible, rewritable, non-volatile memory (NVM) that is imple) mented on a standard, low-temperature a-Si:H process without additional mask steps is reported. This NVM is a part of a flexible-display system. Each NVM cell is composed of differentially configured thin-film-transistors (TFTs). The cell reads out one of two stable states depending on the relative threshold voltages of the differentially configured TFTs. Information is stored in each cell by increasing the threshold voltage of one differential TFT or the other, utilizing the well-known electrical-stress degradation intrinsic to a-Si:H TFTs. The stored information is retained indefinitely with no applied power. A test array of individually addressable NVM cells has been successfully fabricated and tested on flexible stainless-steel substrates. Read and write operation, as well as preliminary reliability measurements, are described. The design is readily scalable to large memory arrays.

Original languageEnglish (US)
Pages (from-to)346-350
Number of pages5
JournalJournal of the Society for Information Display
Volume18
Issue number5
DOIs
StatePublished - May 1 2010

Keywords

  • Amorphous silicon
  • Display backplane technology
  • Flexible electronics
  • Non-volatile memory
  • Thin-film transistors
  • Threshold-voltage degradation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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