@inproceedings{c3eb4a70c5674b20842c452b6e6afe56,
title = "First self-consistent thermal device simulator",
abstract = "We address the most critical issue in nano devices: degradation due to lattice heating. We give recommendations on the lattice heating for different generations of FD SOI devices ranging between 25 nm and 100 nm channel length. We find that in small devices, due to the velocity overshoot effect lattice heating has less degrading effect on the device electrical characteristics. Silicon on diamond is found to be a better device structure in terms of heat transport. We also consider alternative device technologies, such as dual gate devices and find that lattice heating does not have that much degrading effect compared to the current enhancement that these structures offer.",
keywords = "Heating effects, Nanodevices",
author = "Dragica Vasileska and Katerina Raleva and Stephen Goodnick",
year = "2009",
month = dec,
day = "1",
doi = "10.1063/1.3295523",
language = "English (US)",
isbn = "9780735407367",
series = "AIP Conference Proceedings",
pages = "495--496",
booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",
note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",
}