Abstract

We address the most critical issue in nano devices: degradation due to lattice heating. We give recommendations on the lattice heating for different generations of FD SOI devices ranging between 25 nm and 100 nm channel length. We find that in small devices, due to the velocity overshoot effect lattice heating has less degrading effect on the device electrical characteristics. Silicon on diamond is found to be a better device structure in terms of heat transport. We also consider alternative device technologies, such as dual gate devices and find that lattice heating does not have that much degrading effect compared to the current enhancement that these structures offer.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages495-496
Number of pages2
DOIs
StatePublished - Dec 1 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period7/27/088/1/08

Keywords

  • Heating effects
  • Nanodevices

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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