First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices

Santhosh Krishnan, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy).

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages365-368
Number of pages4
DOIs
StatePublished - 2007
Event2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States
Duration: Sep 6 2006Sep 8 2006

Other

Other2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
CountryUnited States
CityMonterey, CA
Period9/6/069/8/06

Fingerprint

Band structure
Heterojunctions
Valence bands
Conduction bands
Orbits
Anisotropy
Scattering

Keywords

  • Particle-based device simulations
  • SiGe devices
  • Strain

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Krishnan, S., & Vasileska, D. (2007). First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 365-368). [4061653] https://doi.org/10.1109/SISPAD.2006.282910

First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices. / Krishnan, Santhosh; Vasileska, Dragica.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2007. p. 365-368 4061653.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krishnan, S & Vasileska, D 2007, First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 4061653, pp. 365-368, 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06, Monterey, CA, United States, 9/6/06. https://doi.org/10.1109/SISPAD.2006.282910
Krishnan S, Vasileska D. First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2007. p. 365-368. 4061653 https://doi.org/10.1109/SISPAD.2006.282910
Krishnan, Santhosh ; Vasileska, Dragica. / First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2007. pp. 365-368
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