TY - GEN
T1 - First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices
AU - Krishnan, Santhosh
AU - Vasileska, Dragica
PY - 2006/1/1
Y1 - 2006/1/1
N2 - In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy).
AB - In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy).
KW - Particle-based device simulations
KW - SiGe devices
KW - Strain
UR - http://www.scopus.com/inward/record.url?scp=42549089268&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42549089268&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2006.282910
DO - 10.1109/SISPAD.2006.282910
M3 - Conference contribution
AN - SCOPUS:42549089268
SN - 1424404045
SN - 9781424404049
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 365
EP - 368
BT - 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Y2 - 6 September 2006 through 8 September 2006
ER -