First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices

Santhosh Krishnan, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy).

Original languageEnglish (US)
Title of host publication2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages365-368
Number of pages4
ISBN (Print)1424404045, 9781424404049
DOIs
StatePublished - Jan 1 2006
Event2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States
Duration: Sep 6 2006Sep 8 2006

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Country/TerritoryUnited States
CityMonterey, CA
Period9/6/069/8/06

Keywords

  • Particle-based device simulations
  • SiGe devices
  • Strain

ASJC Scopus subject areas

  • General Engineering

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