First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices

Santhosh Krishnan, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work we are concerned with proper calculation of the valence band-structure of Si and strained SiGe material systems. The hole band-structure is complicated by the strong anisotropy, nonparabolicity and warping of the heavy-hole and light-hole bands. As the spin-orbit splitting is about 44.2 (296) meV in Si (Ge), one also needs to take the split-off band into account to account for inter and intra-band scattering events to model transport properly. Thus, ignoring the contribution of the distant conduction bands in Si, one has to consider at the very minimum six bands (the heavy-hole, the light hole and the split-off bands multiplied by 2 due to spin degeneracy).

Original languageEnglish (US)
Title of host publication2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages365-368
Number of pages4
ISBN (Print)1424404045, 9781424404049
DOIs
StatePublished - Jan 1 2006
Event2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States
Duration: Sep 6 2006Sep 8 2006

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
CountryUnited States
CityMonterey, CA
Period9/6/069/8/06

Keywords

  • Particle-based device simulations
  • SiGe devices
  • Strain

ASJC Scopus subject areas

  • Engineering(all)

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    Krishnan, S., & Vasileska, D. (2006). First self-consistent full-band 2D Monte Carlo 2D poisson device solver for modeling SiGe heterojunction p-channel devices. In 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 (pp. 365-368). [4061653] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2006.282910