First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001)

P. L. Liu, Andrew Chizmeshya, John Kouvetakis, I. S T Tsong

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27 Citations (Scopus)

Abstract

We conduct first-principles total-energy density functional calculations to study the heteroepitaxial growth behavior of GaN(0001) on ZrB2(0001) substrates. Using repeated free-surface terminated slabs, our calculated surface energies suggest that the ZrB2(0001) surface is Zr terminated. The relative stability of six different models of the GaN(0001)/ZrB2(0001) interface is examined as a function of the chemical potentials of Ga and Zr, and the most favorable interface consists of tetrahedrally coordinated N with one Ga-N bond and three N-Zr bonds. This interface structure gives rise to N-polarity in the GaN epitaxial film. Both of these findings agree with previously reported experimental results.

Original languageEnglish (US)
Article number245335
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number24
DOIs
StatePublished - Dec 15 2005

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Epitaxial growth
Chemical potential
Epitaxial films
Interfacial energy
Density functional theory
surface energy
polarity
slabs
Substrates
flux density

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001). / Liu, P. L.; Chizmeshya, Andrew; Kouvetakis, John; Tsong, I. S T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 24, 245335, 15.12.2005.

Research output: Contribution to journalArticle

@article{813b2e8a733548a5a2eb00a4d867d9b6,
title = "First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001)",
abstract = "We conduct first-principles total-energy density functional calculations to study the heteroepitaxial growth behavior of GaN(0001) on ZrB2(0001) substrates. Using repeated free-surface terminated slabs, our calculated surface energies suggest that the ZrB2(0001) surface is Zr terminated. The relative stability of six different models of the GaN(0001)/ZrB2(0001) interface is examined as a function of the chemical potentials of Ga and Zr, and the most favorable interface consists of tetrahedrally coordinated N with one Ga-N bond and three N-Zr bonds. This interface structure gives rise to N-polarity in the GaN epitaxial film. Both of these findings agree with previously reported experimental results.",
author = "Liu, {P. L.} and Andrew Chizmeshya and John Kouvetakis and Tsong, {I. S T}",
year = "2005",
month = "12",
day = "15",
doi = "10.1103/PhysRevB.72.245335",
language = "English (US)",
volume = "72",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001)

AU - Liu, P. L.

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

AU - Tsong, I. S T

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We conduct first-principles total-energy density functional calculations to study the heteroepitaxial growth behavior of GaN(0001) on ZrB2(0001) substrates. Using repeated free-surface terminated slabs, our calculated surface energies suggest that the ZrB2(0001) surface is Zr terminated. The relative stability of six different models of the GaN(0001)/ZrB2(0001) interface is examined as a function of the chemical potentials of Ga and Zr, and the most favorable interface consists of tetrahedrally coordinated N with one Ga-N bond and three N-Zr bonds. This interface structure gives rise to N-polarity in the GaN epitaxial film. Both of these findings agree with previously reported experimental results.

AB - We conduct first-principles total-energy density functional calculations to study the heteroepitaxial growth behavior of GaN(0001) on ZrB2(0001) substrates. Using repeated free-surface terminated slabs, our calculated surface energies suggest that the ZrB2(0001) surface is Zr terminated. The relative stability of six different models of the GaN(0001)/ZrB2(0001) interface is examined as a function of the chemical potentials of Ga and Zr, and the most favorable interface consists of tetrahedrally coordinated N with one Ga-N bond and three N-Zr bonds. This interface structure gives rise to N-polarity in the GaN epitaxial film. Both of these findings agree with previously reported experimental results.

UR - http://www.scopus.com/inward/record.url?scp=29744458975&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29744458975&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.72.245335

DO - 10.1103/PhysRevB.72.245335

M3 - Article

AN - SCOPUS:29744458975

VL - 72

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 24

M1 - 245335

ER -