Abstract
We use ab initio local-density-approximation methods to develop an ab initio model of an a-Si and an a-Si:H surface. Starting with a supercell of bulk a-Si, we remove periodic boundary conditions in one direction and relax the sample using ab initio methods. H is added to remove bulk defects. The surface structure and coordination of atoms is discussed, and defect states are characterized. H is added to dangling bonds on the a-Si:H surface, creating a hydrogen-terminated a-Si:H surface. We explore the relationship between electronic and geometric surface defects.
Original language | English (US) |
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Pages (from-to) | 17393-17399 |
Number of pages | 7 |
Journal | Physical Review B |
Volume | 48 |
Issue number | 23 |
DOIs | |
State | Published - 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics