First principles modeling of high field transport in wide-band-gap materials

Manfred Dür; Stephen Goodnick; Ronald Redmer; Martin Reigrotzki; Niels Fitzer; Martin Städele

doi:10.1016/S0921-4526(99)00291-4

First principles modeling of high field transport in wide-band-gap materials

Manfred Dür, Stephen Goodnick, Ronald Redmer, Martin Reigrotzki, Niels Fitzer, Martin Städele

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials. ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ionization rate for ZnS and SrS in particular, and GaN to a lesser extent, due to the narrowness of the upper valence bands. The resulting impact ionization coefficient for electrons in ZnS simulated using the EMC with microscopically calculated phonon scattering rates is in good agreement with the re-interpreted data of Thompson and Allen.

Original language	English (US)
Pages (from-to)	295-298
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00291-4
State	Published - Dec 1 1999
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00291-4

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@article{6435622dd764456c97d56c3b209221e9,

title = "First principles modeling of high field transport in wide-band-gap materials",

abstract = "In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials. ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ionization rate for ZnS and SrS in particular, and GaN to a lesser extent, due to the narrowness of the upper valence bands. The resulting impact ionization coefficient for electrons in ZnS simulated using the EMC with microscopically calculated phonon scattering rates is in good agreement with the re-interpreted data of Thompson and Allen.",

author = "Manfred D{\"u}r and Stephen Goodnick and Ronald Redmer and Martin Reigrotzki and Niels Fitzer and Martin St{\"a}dele",

note = "Funding Information: This work was supported by the DARPA under the Phosphor Technology Center of Excellence, Grant No. MDA 972-93-1-0030, and by the Deutsche Forschungsgemeinschaft under Grant No. Re 882/6-2. Additionally, M.D. would also like to acknowledge the support of the Austrian Science Foundation through the Schr{\"o}dinger Fellowship J1741-PHY in this work.; Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

year = "1999",

month = dec,

day = "1",

doi = "10.1016/S0921-4526(99)00291-4",

language = "English (US)",

volume = "272",

pages = "295--298",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - First principles modeling of high field transport in wide-band-gap materials

AU - Dür, Manfred

AU - Goodnick, Stephen

AU - Redmer, Ronald

AU - Reigrotzki, Martin

AU - Fitzer, Niels

AU - Städele, Martin

N1 - Funding Information: This work was supported by the DARPA under the Phosphor Technology Center of Excellence, Grant No. MDA 972-93-1-0030, and by the Deutsche Forschungsgemeinschaft under Grant No. Re 882/6-2. Additionally, M.D. would also like to acknowledge the support of the Austrian Science Foundation through the Schrödinger Fellowship J1741-PHY in this work.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials. ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ionization rate for ZnS and SrS in particular, and GaN to a lesser extent, due to the narrowness of the upper valence bands. The resulting impact ionization coefficient for electrons in ZnS simulated using the EMC with microscopically calculated phonon scattering rates is in good agreement with the re-interpreted data of Thompson and Allen.

AB - In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials. ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ionization rate for ZnS and SrS in particular, and GaN to a lesser extent, due to the narrowness of the upper valence bands. The resulting impact ionization coefficient for electrons in ZnS simulated using the EMC with microscopically calculated phonon scattering rates is in good agreement with the re-interpreted data of Thompson and Allen.

UR - http://www.scopus.com/inward/record.url?scp=0343517531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343517531&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00291-4

DO - 10.1016/S0921-4526(99)00291-4

M3 - Conference article

AN - SCOPUS:0343517531

SN - 0921-4526

VL - 272

SP - 295

EP - 298

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

First principles modeling of high field transport in wide-band-gap materials

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