First principles modeling of high field transport in wide-band-gap materials

Manfred Dür, Stephen Goodnick, Ronald Redmer, Martin Reigrotzki, Niels Fitzer, Martin Städele

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials. ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ionization rate for ZnS and SrS in particular, and GaN to a lesser extent, due to the narrowness of the upper valence bands. The resulting impact ionization coefficient for electrons in ZnS simulated using the EMC with microscopically calculated phonon scattering rates is in good agreement with the re-interpreted data of Thompson and Allen.

Original languageEnglish (US)
Pages (from-to)295-298
Number of pages4
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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