First direct observation of EL2-like defect levels in annealed LT-GaAS

Engineering & Materials Science

• Photocurrents 93%
• Photoexcitation 59%
• Photoemission 57%
• Conduction bands 54%
• Photoionization 54%
• Excited states 53%
• Molecular beam epitaxy 49%
• Electronic properties 49%
• Arsenic 47%
• Band structure 45%
• Defects 44%
• Ionization 41%
• Optical properties 40%
• Precipitates 33%
• Annealing 31%
• Diodes 29%
• Temperature 25%

Chemical Compounds

• Defect Level 100%
• Photocurrent 59%
• Autoionization 51%
• Molecular Beam Epitaxy 46%
• Schottky Barrier 44%
• Photoemission 39%
• Photoionization 37%
• Nonstoichiometric Compound 36%
• Photoexcitation 35%
• Conduction Band 34%
• Electronic Band Structure 32%
• Electronic Property 26%
• Excited State 25%
• Annealing 25%
• Optical Property 23%

Physics & Astronomy

• photocurrents 58%
• autoionization 38%
• defects 35%
• arsenic 34%
• excitation 31%
• photoionization 31%
• precipitates 28%
• photoelectric emission 27%
• conduction bands 27%
• molecular beam epitaxy 27%
• diodes 24%
• broadband 22%
• optical properties 20%
• annealing 19%
• electronics 16%